@inproceedings{4a9642df67cc40f4a8cde4f7fc3d2f5c,
title = "Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor",
abstract = "In this paper we study the effect of the H2/GeH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline Germanium (Ge) embedded in amorphous matrix thin films. The thin films are prepared using a standard RF-PECVD process at a substrate temperature of 300 °C. The effect of the hydrogen dilution ratio on the optical index of refraction and the optical transmission were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with a low GeH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow rate during the growth of μc-Ge:H thin films, approximately 71% crystalline fraction was detected at 100sccm of H2.",
author = "G. Dushaq and M. Rasras and A. Nayfeh",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 - 231st ECS Meeting 2017 ; Conference date: 28-05-2017 Through 01-06-2017",
year = "2017",
doi = "10.1149/07705.0213ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "213--217",
editor = "F. Roozeboom and H. Jagannathan and K. Kakushima and Timans, {P. J.} and Gusev, {E. P.} and Z. Karim and {De Gendt}, S.",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7",
edition = "5",
}