Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Nicoleta Doriana Banu, Ionut Banu, Marios S. Katsiotis, Anjana Tharalekshmy, Samuel Stephen, Jamie Whelan, Gisha Elizabeth Luckachan, Radu Vladea, Saeed M. Alhassan

Research output: Contribution to journalArticle

Abstract

Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.

Original languageEnglish (US)
Pages (from-to)1503-1511
Number of pages9
JournalChemical Papers
Volume70
Issue number11
DOIs
StatePublished - Nov 1 2016

Keywords

  • Raman spectroscopy
  • TiC/SiC composite
  • X-ray diffraction
  • anatase
  • rutile
  • selective oxidation

ASJC Scopus subject areas

  • Biochemistry
  • Chemistry(all)
  • Chemical Engineering(all)
  • Industrial and Manufacturing Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy'. Together they form a unique fingerprint.

  • Cite this

    Banu, N. D., Banu, I., Katsiotis, M. S., Tharalekshmy, A., Stephen, S., Whelan, J., Luckachan, G. E., Vladea, R., & Alhassan, S. M. (2016). Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy. Chemical Papers, 70(11), 1503-1511. https://doi.org/10.1515/chempap-2016-0084