Impact of MOSFET oxide breakdown on digital circuit operation and reliability

B. Kaczer, R. Degraeve, G. Groeseneken, M. Rasras, S. Kubicek, E. Vandamme, G. Badenes

Research output: Contribution to journalConference articlepeer-review


A ring oscillator circuit was used to show that many gate oxide breakdowns could occur in parts of a digital circuit without affecting its overall logical function. This observation implied that the present reliability specifications were too stringent if maintaining the circuit's logical function was the sufficient reliability criteria.

Original languageEnglish (US)
Pages (from-to)553-556
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: Dec 10 2000Dec 13 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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