Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors

G. Dushaq; M. Rasras; A. Nayfeh

doi:10.1149/07508.0661ecst

Impact of N₂O/NH₃/N₂ gas mixture on the interface quality of germanium MOS capacitors

G. Dushaq, M. Rasras, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, nitration of germanium surface using a mixture of N₂O, NH₃ and N2 is performed using RF-PECVD reactor. The electrical characteristics of Al/HfO2/GeON/p-Ge capacitors are investigated. Results show that the hysteresis of metal-oxide- semiconductor (MOS) capacitors with nitration-based passivation step is reduced to ∼150 mV, compared with ∼400mV of the untreated sample. The suppression of hysteresis is attributed to the reduction of electron traps and enhancement of dielectric/Ge interface quality. The improved interface quality of plasma-based nitration of Ge surface is a promising technique for high performance Ge MOSFET fabrication.

Original language	English (US)
Title of host publication	SiGe, Ge, and Related Materials
Subtitle of host publication	Materials, Processing, and Devices 7
Editors	J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
Publisher	Electrochemical Society Inc.
Pages	661-666
Number of pages	6
Edition	8
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/07508.0661ecst
State	Published - 2016
Event	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: Oct 2 2016 → Oct 7 2016

Publication series

Name	ECS Transactions
Number	8
Volume	75
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	10/2/16 → 10/7/16

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/07508.0661ecst

Cite this

Dushaq, G., Rasras, M., & Nayfeh, A. (2016). Impact of N₂O/NH₃/N₂ gas mixture on the interface quality of germanium MOS capacitors. In J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, & S. Miyazaki (Eds.), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., pp. 661-666). (ECS Transactions; Vol. 75, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0661ecst

Impact of N₂O/NH₃/N₂ gas mixture on the interface quality of germanium MOS capacitors. / Dushaq, G.; Rasras, M.; Nayfeh, A.
SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. ed. / J. Murota; B. Tillack; M. Caymax; G. Masini; D. L. Harame; S. Miyazaki. 8. ed. Electrochemical Society Inc., 2016. p. 661-666 (ECS Transactions; Vol. 75, No. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dushaq, G, Rasras, M & Nayfeh, A 2016, Impact of N₂O/NH₃/N₂ gas mixture on the interface quality of germanium MOS capacitors. in J Murota, B Tillack, M Caymax, G Masini, DL Harame & S Miyazaki (eds), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 edn, ECS Transactions, no. 8, vol. 75, Electrochemical Society Inc., pp. 661-666, Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07508.0661ecst

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title = "Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors",

abstract = "In this paper, nitration of germanium surface using a mixture of N2O, NH3 and N2 is performed using RF-PECVD reactor. The electrical characteristics of Al/HfO2/GeON/p-Ge capacitors are investigated. Results show that the hysteresis of metal-oxide- semiconductor (MOS) capacitors with nitration-based passivation step is reduced to ∼150 mV, compared with ∼400mV of the untreated sample. The suppression of hysteresis is attributed to the reduction of electron traps and enhancement of dielectric/Ge interface quality. The improved interface quality of plasma-based nitration of Ge surface is a promising technique for high performance Ge MOSFET fabrication.",

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note = "Funding Information: This work was supported by the Office of Naval Research Scientific Projects (ONR) [grant # N62909-16-1-203]. Moreover, we gratefully acknowledge financial support for this work provided by Masdar Institute of Science and Technology. Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

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N2 - In this paper, nitration of germanium surface using a mixture of N2O, NH3 and N2 is performed using RF-PECVD reactor. The electrical characteristics of Al/HfO2/GeON/p-Ge capacitors are investigated. Results show that the hysteresis of metal-oxide- semiconductor (MOS) capacitors with nitration-based passivation step is reduced to ∼150 mV, compared with ∼400mV of the untreated sample. The suppression of hysteresis is attributed to the reduction of electron traps and enhancement of dielectric/Ge interface quality. The improved interface quality of plasma-based nitration of Ge surface is a promising technique for high performance Ge MOSFET fabrication.

AB - In this paper, nitration of germanium surface using a mixture of N2O, NH3 and N2 is performed using RF-PECVD reactor. The electrical characteristics of Al/HfO2/GeON/p-Ge capacitors are investigated. Results show that the hysteresis of metal-oxide- semiconductor (MOS) capacitors with nitration-based passivation step is reduced to ∼150 mV, compared with ∼400mV of the untreated sample. The suppression of hysteresis is attributed to the reduction of electron traps and enhancement of dielectric/Ge interface quality. The improved interface quality of plasma-based nitration of Ge surface is a promising technique for high performance Ge MOSFET fabrication.

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