Impact of N2O/NH3/N2 gas mixture on the interface quality of germanium MOS capacitors

G. Dushaq, M. Rasras, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, nitration of germanium surface using a mixture of N2O, NH3 and N2 is performed using RF-PECVD reactor. The electrical characteristics of Al/HfO2/GeON/p-Ge capacitors are investigated. Results show that the hysteresis of metal-oxide- semiconductor (MOS) capacitors with nitration-based passivation step is reduced to ∼150 mV, compared with ∼400mV of the untreated sample. The suppression of hysteresis is attributed to the reduction of electron traps and enhancement of dielectric/Ge interface quality. The improved interface quality of plasma-based nitration of Ge surface is a promising technique for high performance Ge MOSFET fabrication.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Materials
Subtitle of host publicationMaterials, Processing, and Devices 7
EditorsJ. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
PublisherElectrochemical Society Inc.
Pages661-666
Number of pages6
Edition8
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2016
EventSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Publication series

NameECS Transactions
Number8
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

ASJC Scopus subject areas

  • Engineering(all)

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