TY - JOUR
T1 - Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion
AU - Zhou, Guangnan
AU - Lee, Kwang Hong
AU - Anjum, Dalaver H.
AU - Zhang, Qiang
AU - Zhang, Xixiang
AU - Tan, Chuan Seng
AU - Xia, Guangrui
PY - 2018/5/1
Y1 - 2018/5/1
N2 - Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 108 cm-2, while P and As doping can reduce the threading dislocation density to be less than 106 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full xGe range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.
AB - Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 108 cm-2, while P and As doping can reduce the threading dislocation density to be less than 106 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full xGe range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.
UR - http://www.scopus.com/inward/record.url?scp=85045065220&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85045065220&partnerID=8YFLogxK
U2 - 10.1364/OME.8.001117
DO - 10.1364/OME.8.001117
M3 - Article
AN - SCOPUS:85045065220
VL - 8
SP - 1117
EP - 1131
JO - Optical Materials Express
JF - Optical Materials Express
SN - 2159-3930
IS - 5
ER -