Improved N-layer materials for high-Tc superconductor/normal-metal/superconductor junctions and superconducting quantum interference device sensors

Ji Ping Zhou; John T. McDevitt; Q. X. Jia

doi:10.1063/1.120913

Improved N-layer materials for high-T_c superconductor/normal-metal/superconductor junctions and superconducting quantum interference device sensors

Ji Ping Zhou, John T. McDevitt, Q. X. Jia

Research output: Contribution to journal › Article › peer-review

Abstract

In order to solve some of the formidable problems related to producing reliable and reproducible cuprate superconductor/normal-metal/superconductor (SNS) junctions, new N-layer compounds from the family of R_1-xCa_xBa_2-yLa_yCu _3-zM_zO_7-δ (R=Y, Gd and Pr; M=Co, Ni and Zn; 0≤x≤0.4; 0≤y≤0.4; 0≤z≤0.4) have been synthesized and their properties characterized. Thus, a crystal engineering approach has been adopted in an effort to generate reliable materials for use in high T_c superconducting devices. Careful analyses of the various prepared phases reveal optimum substitution levels for selected compositions where the N-layer compounds exhibit structures compatible with common superconductor electrode materials. The new compounds have been used for demonstration purposes as the N-layer material for the construction of ramp-edge-geometry SNS junctions and superconducting quantum interference device sensors.

Original language	English (US)
Pages (from-to)	848-850
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	7
DOIs	https://doi.org/10.1063/1.120913
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120913

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abstract = "In order to solve some of the formidable problems related to producing reliable and reproducible cuprate superconductor/normal-metal/superconductor (SNS) junctions, new N-layer compounds from the family of R1-xCaxBa2-yLayCu 3-zMzO7-δ (R=Y, Gd and Pr; M=Co, Ni and Zn; 0≤x≤0.4; 0≤y≤0.4; 0≤z≤0.4) have been synthesized and their properties characterized. Thus, a crystal engineering approach has been adopted in an effort to generate reliable materials for use in high Tc superconducting devices. Careful analyses of the various prepared phases reveal optimum substitution levels for selected compositions where the N-layer compounds exhibit structures compatible with common superconductor electrode materials. The new compounds have been used for demonstration purposes as the N-layer material for the construction of ramp-edge-geometry SNS junctions and superconducting quantum interference device sensors.",

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AU - Zhou, Ji Ping

AU - McDevitt, John T.

AU - Jia, Q. X.

PY - 1998

Y1 - 1998

N2 - In order to solve some of the formidable problems related to producing reliable and reproducible cuprate superconductor/normal-metal/superconductor (SNS) junctions, new N-layer compounds from the family of R1-xCaxBa2-yLayCu 3-zMzO7-δ (R=Y, Gd and Pr; M=Co, Ni and Zn; 0≤x≤0.4; 0≤y≤0.4; 0≤z≤0.4) have been synthesized and their properties characterized. Thus, a crystal engineering approach has been adopted in an effort to generate reliable materials for use in high Tc superconducting devices. Careful analyses of the various prepared phases reveal optimum substitution levels for selected compositions where the N-layer compounds exhibit structures compatible with common superconductor electrode materials. The new compounds have been used for demonstration purposes as the N-layer material for the construction of ramp-edge-geometry SNS junctions and superconducting quantum interference device sensors.

AB - In order to solve some of the formidable problems related to producing reliable and reproducible cuprate superconductor/normal-metal/superconductor (SNS) junctions, new N-layer compounds from the family of R1-xCaxBa2-yLayCu 3-zMzO7-δ (R=Y, Gd and Pr; M=Co, Ni and Zn; 0≤x≤0.4; 0≤y≤0.4; 0≤z≤0.4) have been synthesized and their properties characterized. Thus, a crystal engineering approach has been adopted in an effort to generate reliable materials for use in high Tc superconducting devices. Careful analyses of the various prepared phases reveal optimum substitution levels for selected compositions where the N-layer compounds exhibit structures compatible with common superconductor electrode materials. The new compounds have been used for demonstration purposes as the N-layer material for the construction of ramp-edge-geometry SNS junctions and superconducting quantum interference device sensors.

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Improved N-layer materials for high-T_c superconductor/normal-metal/superconductor junctions and superconducting quantum interference device sensors

Abstract

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