Improved N-layer materials for high-Tc superconductor/normal-metal/superconductor junctions and superconducting quantum interference device sensors

Ji Ping Zhou, John T. McDevitt, Q. X. Jia

Research output: Contribution to journalArticlepeer-review

Abstract

In order to solve some of the formidable problems related to producing reliable and reproducible cuprate superconductor/normal-metal/superconductor (SNS) junctions, new N-layer compounds from the family of R1-xCaxBa2-yLayCu 3-zMzO7-δ (R=Y, Gd and Pr; M=Co, Ni and Zn; 0≤x≤0.4; 0≤y≤0.4; 0≤z≤0.4) have been synthesized and their properties characterized. Thus, a crystal engineering approach has been adopted in an effort to generate reliable materials for use in high Tc superconducting devices. Careful analyses of the various prepared phases reveal optimum substitution levels for selected compositions where the N-layer compounds exhibit structures compatible with common superconductor electrode materials. The new compounds have been used for demonstration purposes as the N-layer material for the construction of ramp-edge-geometry SNS junctions and superconducting quantum interference device sensors.

Original languageEnglish (US)
Pages (from-to)848-850
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number7
DOIs
StatePublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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