Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

H. W. Huang; C. H. Lin; C. C. Yu; B. D. Lee; C. H. Chiu; C. F. Lai; H. C. Kuo; K. M. Leung; T. C. Lu; S. C. Wang

doi:10.1088/0268-1242/23/4/045022

Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, S. C. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.

Original language	English (US)
Article number	045022
Journal	Semiconductor Science and Technology
Volume	23
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/23/4/045022
State	Published - Apr 1 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/23/4/045022

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title = "Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography",

abstract = "The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.",

author = "Huang, {H. W.} and Lin, {C. H.} and Yu, {C. C.} and Lee, {B. D.} and Chiu, {C. H.} and Lai, {C. F.} and Kuo, {H. C.} and Leung, {K. M.} and Lu, {T. C.} and Wang, {S. C.}",

year = "2008",

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doi = "10.1088/0268-1242/23/4/045022",

language = "English (US)",

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journal = "Semiconductor Science and Technology",

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T1 - Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

AU - Huang, H. W.

AU - Lin, C. H.

AU - Yu, C. C.

AU - Lee, B. D.

AU - Chiu, C. H.

AU - Lai, C. F.

AU - Kuo, H. C.

AU - Leung, K. M.

AU - Lu, T. C.

AU - Wang, S. C.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.

AB - The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.

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SN - 0268-1242

VL - 23

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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M1 - 045022

ER -

Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

Abstract

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