Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, S. C. Wang

    Research output: Contribution to journalArticle

    Abstract

    The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.

    Original languageEnglish (US)
    Article number045022
    JournalSemiconductor Science and Technology
    Volume23
    Issue number4
    DOIs
    StatePublished - Apr 1 2008

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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    Huang, H. W., Lin, C. H., Yu, C. C., Lee, B. D., Chiu, C. H., Lai, C. F., Kuo, H. C., Leung, K. M., Lu, T. C., & Wang, S. C. (2008). Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography. Semiconductor Science and Technology, 23(4), [045022]. https://doi.org/10.1088/0268-1242/23/4/045022