Abstract
A spatially resolved optical emission spectroscopy technique was applied to measure etchant concentration profiles in parallel plate plasma reactors. Also, multichannel laser interferometry was used to measure etching uniformity during plasma processing.
| Original language | English (US) |
|---|---|
| Pages | 107-111 |
| Number of pages | 5 |
| Volume | 34 |
| No | 4 |
| Specialist publication | Solid State Technology |
| State | Published - Apr 1991 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry