In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

W. M.M. Kessels, Denise C. Marra, M. C.M. Van De Sanden, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review

Abstract

A recently developed method to determine the surface hydride composition on plasma deposited a-Si:H by means of in situ attenuated total reflection infrared spectroscopy was studied in detail. The determination of the surface composition in terms of mono-, di-, and trihydrides on the basis of data available for hydrogenated c-Si surfaces was addressed and the quantification of the hydrogen surface coverage by using data from ideally hydrogen terminated c-Si surfaces and from bulk a-Si:H was highlighted. In addition, the method of Ar ion bombardment was compared with other techniques using isotope substitution. The resulting data was analyzed in detail.

Original languageEnglish (US)
Pages (from-to)781-789
Number of pages9
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
StatePublished - May 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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