Abstract
A recently developed method to determine the surface hydride composition on plasma deposited a-Si:H by means of in situ attenuated total reflection infrared spectroscopy was studied in detail. The determination of the surface composition in terms of mono-, di-, and trihydrides on the basis of data available for hydrogenated c-Si surfaces was addressed and the quantification of the hydrogen surface coverage by using data from ideally hydrogen terminated c-Si surfaces and from bulk a-Si:H was highlighted. In addition, the method of Ar ion bombardment was compared with other techniques using isotope substitution. The resulting data was analyzed in detail.
Original language | English (US) |
---|---|
Pages (from-to) | 781-789 |
Number of pages | 9 |
Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 20 |
Issue number | 3 |
DOIs | |
State | Published - May 2002 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films