Inelastic electron tunneling spectroscopy of thin ZnO barrier films

T. F. Refai, E. L. Wolf

Research output: Contribution to journalArticlepeer-review


Study by inelastic electron tunneling spectroscopy of 30 Å ZnO layers grown by thermal oxidation of zinc to form Zn/ZnO/Pb and Al/Al2O3/ZnO/Pb tunnel junctions is reported. Second derivative (d2V/dI2) peaks reveal additional transverse optical and longitudinal optical phonons of energy 12.6 meV and 15.4 meV respectively in ZnO. The barrier height at the Zn-ZnO interface is found to be 0.4 eV, consistent with the usual n-type semiconductor picture of ZnO.

Original languageEnglish (US)
Pages (from-to)345-350
Number of pages6
JournalThin Solid Films
Issue number4
StatePublished - Jan 28 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Inelastic electron tunneling spectroscopy of thin ZnO barrier films'. Together they form a unique fingerprint.

Cite this