Inelastic electron tunneling spectroscopy of thin ZnO barrier films

T. F. Refai; E. L. Wolf

doi:10.1016/0040-6090(83)90059-7

Inelastic electron tunneling spectroscopy of thin ZnO barrier films

T. F. Refai, E. L. Wolf

Applied Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Study by inelastic electron tunneling spectroscopy of 30 Å ZnO layers grown by thermal oxidation of zinc to form Zn/ZnO/Pb and Al/Al₂O₃/ZnO/Pb tunnel junctions is reported. Second derivative (d²V/dI²) peaks reveal additional transverse optical and longitudinal optical phonons of energy 12.6 meV and 15.4 meV respectively in ZnO. The barrier height at the Zn-ZnO interface is found to be 0.4 eV, consistent with the usual n-type semiconductor picture of ZnO.

Original language	English (US)
Pages (from-to)	345-350
Number of pages	6
Journal	Thin Solid Films
Volume	99
Issue number	4
DOIs	https://doi.org/10.1016/0040-6090(83)90059-7
State	Published - Jan 28 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(83)90059-7

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abstract = "Study by inelastic electron tunneling spectroscopy of 30 {\AA} ZnO layers grown by thermal oxidation of zinc to form Zn/ZnO/Pb and Al/Al2O3/ZnO/Pb tunnel junctions is reported. Second derivative (d2V/dI2) peaks reveal additional transverse optical and longitudinal optical phonons of energy 12.6 meV and 15.4 meV respectively in ZnO. The barrier height at the Zn-ZnO interface is found to be 0.4 eV, consistent with the usual n-type semiconductor picture of ZnO.",

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AU - Wolf, E. L.

PY - 1983/1/28

Y1 - 1983/1/28

N2 - Study by inelastic electron tunneling spectroscopy of 30 Å ZnO layers grown by thermal oxidation of zinc to form Zn/ZnO/Pb and Al/Al2O3/ZnO/Pb tunnel junctions is reported. Second derivative (d2V/dI2) peaks reveal additional transverse optical and longitudinal optical phonons of energy 12.6 meV and 15.4 meV respectively in ZnO. The barrier height at the Zn-ZnO interface is found to be 0.4 eV, consistent with the usual n-type semiconductor picture of ZnO.

AB - Study by inelastic electron tunneling spectroscopy of 30 Å ZnO layers grown by thermal oxidation of zinc to form Zn/ZnO/Pb and Al/Al2O3/ZnO/Pb tunnel junctions is reported. Second derivative (d2V/dI2) peaks reveal additional transverse optical and longitudinal optical phonons of energy 12.6 meV and 15.4 meV respectively in ZnO. The barrier height at the Zn-ZnO interface is found to be 0.4 eV, consistent with the usual n-type semiconductor picture of ZnO.

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Inelastic electron tunneling spectroscopy of thin ZnO barrier films

Abstract

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