Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics

Ghada Dushaq; Mahmoud Rasras

doi:10.1109/CLEOE-EQEC.2019.8872335

Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Monolithic integration of III-V materials on silicon appears as the most promising, cost-effective and versatile method for the next generation of optoelectronic devices [1-3].

Original language	English (US)
Title of host publication	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728104690
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2019.8872335
State	Published - Jun 2019
Event	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - Munich, Germany Duration: Jun 23 2019 → Jun 27 2019

Publication series

Name	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

Conference

Conference	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Country/Territory	Germany
City	Munich
Period	6/23/19 → 6/27/19

ASJC Scopus subject areas

Spectroscopy
Electronic, Optical and Magnetic Materials
Instrumentation
Atomic and Molecular Physics, and Optics
Computer Networks and Communications

Access to Document

10.1109/CLEOE-EQEC.2019.8872335

Cite this

Dushaq, G., & Rasras, M. (2019). Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics. In 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 Article 8872335 (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOE-EQEC.2019.8872335

Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics. / Dushaq, Ghada; Rasras, Mahmoud.
2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8872335 (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dushaq, G & Rasras, M 2019, Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics. in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019., 8872335, 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, Munich, Germany, 6/23/19. https://doi.org/10.1109/CLEOE-EQEC.2019.8872335

Dushaq G, Rasras M. Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics. In 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8872335. (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019). doi: 10.1109/CLEOE-EQEC.2019.8872335

Dushaq, Ghada ; Rasras, Mahmoud. / Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics. 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019).

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abstract = "Monolithic integration of III-V materials on silicon appears as the most promising, cost-effective and versatile method for the next generation of optoelectronic devices [1-3].",

author = "Ghada Dushaq and Mahmoud Rasras",

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M3 - Conference contribution

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BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

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Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics

Abstract

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