Integration of metal-GaAs-metal photodetectors on Si using thin Ge buffer layers for applications in visible photonics

Ghada Dushaq, Mahmoud Rasras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monolithic integration of III-V materials on silicon appears as the most promising, cost-effective and versatile method for the next generation of optoelectronic devices [1-3].

Original languageEnglish (US)
Title of host publication2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728104690
DOIs
StatePublished - Jun 2019
Event2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - Munich, Germany
Duration: Jun 23 2019Jun 27 2019

Publication series

Name2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

Conference

Conference2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
CountryGermany
CityMunich
Period6/23/196/27/19

ASJC Scopus subject areas

  • Spectroscopy
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

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