Integration of metal- GaAs -Metal photodetectors on si using thin ge buffer layers for applications in visible photonics

Ghada Dushaq, Mahmoud Rasras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monolithic integration of III-V materials on silicon appears as the most promising, cost-effective and versatile method for the next generation of optoelectronic devices [1-3]. Several research efforts have been devoted to understand the epitaxial growth of high quality III-V semiconductor on low cost Si substrates. However, the growth process has proven difficult due to number of fundamental problems. Thus, it is essential to develop a growth process that produces III-V films with low surface roughness and an acceptable defect density at low deposition temperature. In this work we demonstrate GaAs metal-semiconductor-metal photodetector (MSM PD) epitaxially grown on Si. The growth of GaAs is carried out using the low temperature thin Ge interlayers which was previously demonstrated [4]. In the present device architecture, a two-step direct growth of Ge-on-Si acts as a “virtual” substrates to reduce the overall threading dislocation density in the GaAs device layers.

Original languageEnglish (US)
Title of host publicationThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
StatePublished - 2019
EventThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019 - Munich, Germany
Duration: Jun 23 2019Jun 27 2019

Publication series

NameOptics InfoBase Conference Papers
VolumePart F140-CLEO_Europe 2019

Conference

ConferenceThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019
CountryGermany
CityMunich
Period6/23/196/27/19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Fingerprint Dive into the research topics of 'Integration of metal- GaAs -Metal photodetectors on si using thin ge buffer layers for applications in visible photonics'. Together they form a unique fingerprint.

Cite this