Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces

Sumit Agarwal, Mayur S. Valipa, Bram Hoex, M. C.M. Van De Sanden, Dimitrios Maroudas, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review


Interactions of SiH3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH3 radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH3 insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH3 and the temperature dependent smoothening mechanism of a-Si:H thin films.

Original languageEnglish (US)
Pages (from-to)35-44
Number of pages10
JournalSurface Science
Issue number1-3
StatePublished - Dec 20 2005


  • Amorphous surfaces
  • Amorphous thin films
  • Chemical vapor deposition
  • Plasma processing
  • Silane
  • Silicon
  • Surface chemical reaction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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