Abstract
Interactions of SiH3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH3 radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH3 insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH3 and the temperature dependent smoothening mechanism of a-Si:H thin films.
Original language | English (US) |
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Pages (from-to) | 35-44 |
Number of pages | 10 |
Journal | Surface Science |
Volume | 598 |
Issue number | 1-3 |
DOIs | |
State | Published - Dec 20 2005 |
Keywords
- Amorphous surfaces
- Amorphous thin films
- Chemical vapor deposition
- Plasma processing
- Silane
- Silicon
- Surface chemical reaction
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry