Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers

Qiang Zhang, Junwei Zhang, Yuelei Zhao, Yan Wen, Peng Li, Senfu Zhang, Xin He, Junli Zhang, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review


The effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12n/Fe36n)n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρxx) increases by 6.4 times and the anomalous Hall resistivity (ρAHE) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.

Original languageEnglish (US)
Article number055813
JournalAIP Advances
Issue number5
StatePublished - May 1 2018

ASJC Scopus subject areas

  • General Physics and Astronomy


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