Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

Qiang Zhang, Peng Li, Yan Wen, Xin He, Yuelei Zhao, Junli Zhang, Xixiang Zhang

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The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the (Ni36/n nm/Au12/n nm)n multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5-300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (PAHE) was enhanced by more than six times at 5 K from n = 1 to n = 12 due to the increased interfacial scattering, whereas the longitudinal resistivity (Pxx) was increased nearly three times. A scaling relation PAHE ∼ Pxxγ with γ = 1.85 was obtained for PAHE and Pxx measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation PAHE = αPxx0 + βPxx02 + bPxx2 (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.

Original languageEnglish (US)
Article number235002
JournalJournal of Physics D: Applied Physics
Issue number23
StatePublished - May 16 2017


  • anomalous Hall effect
  • magnetoresistance
  • multilayer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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