Abstract
The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the (Ni36/n nm/Au12/n nm)n multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5-300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (PAHE) was enhanced by more than six times at 5 K from n = 1 to n = 12 due to the increased interfacial scattering, whereas the longitudinal resistivity (Pxx) was increased nearly three times. A scaling relation PAHE ∼ Pxxγ with γ = 1.85 was obtained for PAHE and Pxx measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation PAHE = αPxx0 + βPxx02 + bPxx2 (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.
Original language | English (US) |
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Article number | 235002 |
Journal | Journal of Physics D: Applied Physics |
Volume | 50 |
Issue number | 23 |
DOIs | |
State | Published - May 16 2017 |
Keywords
- anomalous Hall effect
- magnetoresistance
- multilayer
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films