Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

Qiang Zhang; Peng Li; Yan Wen; Xin He; Yuelei Zhao; Junli Zhang; Xixiang Zhang

doi:10.1088/1361-6463/aa6e84

Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

Qiang Zhang, Peng Li, Yan Wen, Xin He, Yuelei Zhao, Junli Zhang, Xixiang Zhang

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Abstract

The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the (Ni_{36/n nm}/Au_{12/n nm})_n multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5-300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (P_AHE) was enhanced by more than six times at 5 K from n = 1 to n = 12 due to the increased interfacial scattering, whereas the longitudinal resistivity (P_xx) was increased nearly three times. A scaling relation P_AHE ∼ P_xx^γ with γ = 1.85 was obtained for P_AHE and P_xx measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation P_AHE = αP_xx0 + βP_xx0² + bP_xx² (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.

Original language	English (US)
Article number	235002
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	23
DOIs	https://doi.org/10.1088/1361-6463/aa6e84
State	Published - May 16 2017

Keywords

anomalous Hall effect
magnetoresistance
multilayer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/1361-6463/aa6e84

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title = "Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers",

abstract = "The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the (Ni36/n nm/Au12/n nm)n multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5-300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (PAHE) was enhanced by more than six times at 5 K from n = 1 to n = 12 due to the increased interfacial scattering, whereas the longitudinal resistivity (Pxx) was increased nearly three times. A scaling relation PAHE ∼ Pxxγ with γ = 1.85 was obtained for PAHE and Pxx measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation PAHE = αPxx0 + βPxx02 + bPxx2 (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.",

keywords = "anomalous Hall effect, magnetoresistance, multilayer",

author = "Qiang Zhang and Peng Li and Yan Wen and Xin He and Yuelei Zhao and Junli Zhang and Xixiang Zhang",

note = "Funding Information: QZ and PL acknowledge the financial support by the KAUST sensor project (REP/1/2708-01). XH acknowledges the financial support by the KAUST sensor project (REP/1/2719-01). Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

year = "2017",

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doi = "10.1088/1361-6463/aa6e84",

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journal = "Journal of Physics D: Applied Physics",

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T1 - Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

AU - Zhang, Qiang

AU - Li, Peng

AU - Wen, Yan

AU - He, Xin

AU - Zhao, Yuelei

AU - Zhang, Junli

AU - Zhang, Xixiang

N1 - Funding Information: QZ and PL acknowledge the financial support by the KAUST sensor project (REP/1/2708-01). XH acknowledges the financial support by the KAUST sensor project (REP/1/2719-01). Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2017/5/16

Y1 - 2017/5/16

N2 - The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the (Ni36/n nm/Au12/n nm)n multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5-300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (PAHE) was enhanced by more than six times at 5 K from n = 1 to n = 12 due to the increased interfacial scattering, whereas the longitudinal resistivity (Pxx) was increased nearly three times. A scaling relation PAHE ∼ Pxxγ with γ = 1.85 was obtained for PAHE and Pxx measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation PAHE = αPxx0 + βPxx02 + bPxx2 (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.

AB - The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the (Ni36/n nm/Au12/n nm)n multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5-300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (PAHE) was enhanced by more than six times at 5 K from n = 1 to n = 12 due to the increased interfacial scattering, whereas the longitudinal resistivity (Pxx) was increased nearly three times. A scaling relation PAHE ∼ Pxxγ with γ = 1.85 was obtained for PAHE and Pxx measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation PAHE = αPxx0 + βPxx02 + bPxx2 (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.

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Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

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