@article{79d74bb5f6034042a0d49d7e5b1c5570,
title = "Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies",
abstract = "Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies separated by a non-magnetic spacer is studied using ferromagnetic resonance. The samples consist of a Co/Ni multilayer with perpendicular magnetic anisotropy and a CoFeB layer with easy-plane anisotropy separated by a variable thickness Ru layer. At a fixed frequency, we show that there is an avoided crossing of layer ferromagnetic resonance modes providing direct evidence for interlayer coupling. The mode dispersions for different Ru thicknesses are fit to a Heisenberg-type model to determine the interlayer exchange coupling strength and layer properties. The resulting interlayer exchange coupling varies continuously from antiferromagnetic to ferromagnetic as a function of the Ru interlayer thickness. These results show that the magnetic layer single domain ground state consists of magnetizations that can be significantly canted with respect to the layer planes and the canting can be tuned by varying the Ru thickness and the layer magnetic characteristics, a capability of interest for applications in spin-transfer torque devices.",
author = "Lorenzo Fallarino and Volker Sluka and Bartek Kardasz and Mustafa Pinarbasi and Andreas Berger and Kent, {Andrew D.}",
note = "Funding Information: We thank Dr. Jonathan Sun for helpful discussions of this project. L.F. and A.B. acknowledge support from Basque Government under the Project No. PI2015-1-19 and from the Spanish Ministry of economy and competitiveness under the Project No. FIS2015-64519-R (MINECO/FEDER). L.F. acknowledges support from the Predoctoral Program of the Basque Government through the Grant No. PRE-2015-2-0126 and from the Pre-doctoral Mobility Program of the Basque Government under the Grant No. EP2015-1-14. This research was supported by Spin Transfer Technologies, Inc. and in part by National Science Foundation under Grant Nos. DMR-1309202 and DMR-1610416. A.D.K. also acknowledges support from the Institute for Nanoelectronics Discovery and Exploration (INDEX), a funded center of the Nanoelectronics Research Initiative (NRI), a Semiconductor Research Corporation (SRC) program sponsored by National Science Foundation's Engineering Research Centers (NERC) and the National Institute of Standards and Technology (NIST). Publisher Copyright: {\textcopyright} 2016 Author(s).",
year = "2016",
month = aug,
day = "22",
doi = "10.1063/1.4960795",
language = "English (US)",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "8",
}