Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films

H. Q. Yin, J. S. Zhou, J. P. Zhou, R. Dass, J. T. McDevitt, John B. Goodenough

Research output: Contribution to journalArticlepeer-review


Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited on LaAlO3 and SrTiO3 (001) substrates. Comparison of their transport and magnetic properties with those of polycrystalline ceramic samples shows a metallic versus semiconductor temperature dependence and a saturation magnetization Ms at 10 K of 3.2 μB/f.u. in the film as against 3.0 for a tetragonal polycrystalline sample. However, the Curie temperature TC≈389 K is reduced from 415 K found for the tetragonal ceramic, which lowers Ms at 300 K in the thin films to 2.0 μB/f.u. compared to 2.2 μB/f.u. in the ceramics. A Wheatstone bridge arrangement straddling a bicrystal boundary has been used to verify that spin-dependent electron transfer through a grain boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC.

Original languageEnglish (US)
Pages (from-to)2812-2814
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - Nov 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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