Inverse design of a 4-way crossing for integration of anisotropic materials on silicon waveguides

Juan Esteban Villegas; Ghada Dushaq; Mahmoud Rasras

Inverse design of a 4-way crossing for integration of anisotropic materials on silicon waveguides

Juan Esteban Villegas, Ghada Dushaq, Mahmoud Rasras

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a compact (6.5 x 6.5 μm) silicon photonics design of a 4-way crossing with minimized cross-talk <20 dB in all ports and an area of only 19.86 µm². The design was realized using gradient descent shape optimization and the adjoint method. It is manufactured using e-beam lithography and characterized for the C- and L-bands.

Original language	English (US)
Article number	JTu5A.58
Journal	Optics InfoBase Conference Papers
State	Published - 2022
Event	Frontiers in Optics, FiO 2022 - Rochester, United States Duration: Oct 17 2022 → Oct 20 2022

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Cite this

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title = "Inverse design of a 4-way crossing for integration of anisotropic materials on silicon waveguides",

abstract = "We present a compact (6.5 x 6.5 μm) silicon photonics design of a 4-way crossing with minimized cross-talk <20 dB in all ports and an area of only 19.86 µm2. The design was realized using gradient descent shape optimization and the adjoint method. It is manufactured using e-beam lithography and characterized for the C- and L-bands.",

author = "Villegas, {Juan Esteban} and Ghada Dushaq and Mahmoud Rasras",

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AU - Villegas, Juan Esteban

AU - Dushaq, Ghada

AU - Rasras, Mahmoud

PY - 2022

Y1 - 2022

N2 - We present a compact (6.5 x 6.5 μm) silicon photonics design of a 4-way crossing with minimized cross-talk <20 dB in all ports and an area of only 19.86 µm2. The design was realized using gradient descent shape optimization and the adjoint method. It is manufactured using e-beam lithography and characterized for the C- and L-bands.

AB - We present a compact (6.5 x 6.5 μm) silicon photonics design of a 4-way crossing with minimized cross-talk <20 dB in all ports and an area of only 19.86 µm2. The design was realized using gradient descent shape optimization and the adjoint method. It is manufactured using e-beam lithography and characterized for the C- and L-bands.

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M3 - Conference article

AN - SCOPUS:85146745155

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - JTu5A.58

T2 - Frontiers in Optics, FiO 2022

Y2 - 17 October 2022 through 20 October 2022

ER -

Inverse design of a 4-way crossing for integration of anisotropic materials on silicon waveguides

Abstract

ASJC Scopus subject areas

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