We present InP metal-oxide-semiconductor capacitors (MOSCAPs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) with stacked HfAlOxHfO2 gate dielectric deposited by atomic layer deposition. Compared with single Hf O2, the use of stacked HfAlO xHfO2 results in better interface quality with InP substrate, as illustrated by smaller frequency dispersion and lower leakage current density. The equivalent oxide thickness of MOSCAPs with 10 Å HfAlOx 25 Å HfO2 stacked gate dielectric is 12 Å. The MOSFETs with this gate dielectric achieve two times higher transconductance than those with single 35 Å HfO2. They also exhibit drive current of 60 mAmm and subthreshold swing of 83 mV/decade for 5 μm gate length.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)