Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric

Han Zhao, Davood Shahrjerdi, Feng Zhu, Hyoung Sub Kim, Injo Ok, Manhong Zhang, Jung Hwan Yum, Sanjay K. Banerjee, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

Abstract

We present results on n-channel inversion-type InP metal-oxide- semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2 O3 gate dielectric using the gate-last process. InP MOSFETs with an equivalent oxide thickness (EOT) of 21 Å were realized with high performance including a drive current of 50 mA/mm, an extrinsic transconductance of 44.2 mS/mm, a subthreshold swing of 90 mV/dec, and a peak effective electron mobility of 745 cm2 / Vs for a 50 μm gate length. The transmission electron microscopy and X-ray photoemission spectroscopy measurements demonstrate an interface between Al2 O3 and InP substrates with high quality and good thermal stability. The effects of fast and slow traps on the transistor performance have also been investigated using constant electrical stress measurements and pulse measurements.

Original languageEnglish (US)
Pages (from-to)H233-H235
JournalElectrochemical and Solid-State Letters
Volume11
Issue number8
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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