Fingerprint
Dive into the research topics of 'Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric'. Together they form a unique fingerprint.- Sort by
- Weight
- Alphabetically
Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric
Han Zhao, Davood Shahrjerdi, Feng Zhu, Hyoung Sub Kim, Injo Ok, Manhong Zhang, Jung Hwan Yum, Sanjay K. Banerjee, Jack C. Lee
Research output: Contribution to journal › Article › peer-review