Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching

H. W. Huang; C. H. Lin; C. C. Yu; K. Y. Lee; B. D. Lee; H. C. Kuo; S. Y. Kuo; K. M. Leung; S. C. Wang

doi:10.1016/j.mseb.2008.07.002

Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching

H. W. Huang, C. H. Lin, C. C. Yu, K. Y. Lee, B. D. Lee, H. C. Kuo, S. Y. Kuo, K. M. Leung, S. C. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

The GaN-based thin-film vertical-injection LEDs (VLEDs) with GaN nano-cone structures are fabricated and presented. Under the process conditions of fixed Cl₂/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W, the GaN nano-cone structures are self-assembly formed with variable density of 1.5 × 10⁷ to 1.4 × 10⁹ cm^-2 and variable depth of 0.56-1.34 μm when varying the ICP chamber pressure. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power of our thin-film LED with a specific GaN nano-cone structure reaches 224 mW which is enhanced by 160% when compared with the output power of conventional VLED. In addition, the corresponding light radiation pattern shows much higher light intensity due to the strong light scattering effect by the formed nano-cone structure.

Original language	English (US)
Pages (from-to)	205-209
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	151
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2008.07.002
State	Published - Jul 25 2008

Keywords

Inductively coupled plasma (ICP)
Light-emitting diode (LED)
Nano-cone

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2008.07.002

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@article{526a0c61cf5e4fdcb2c8ab1858ce8a58,

title = "Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching",

abstract = "The GaN-based thin-film vertical-injection LEDs (VLEDs) with GaN nano-cone structures are fabricated and presented. Under the process conditions of fixed Cl2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W, the GaN nano-cone structures are self-assembly formed with variable density of 1.5 × 107 to 1.4 × 109 cm-2 and variable depth of 0.56-1.34 μm when varying the ICP chamber pressure. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power of our thin-film LED with a specific GaN nano-cone structure reaches 224 mW which is enhanced by 160% when compared with the output power of conventional VLED. In addition, the corresponding light radiation pattern shows much higher light intensity due to the strong light scattering effect by the formed nano-cone structure.",

keywords = "Inductively coupled plasma (ICP), Light-emitting diode (LED), Nano-cone",

author = "Huang, {H. W.} and Lin, {C. H.} and Yu, {C. C.} and Lee, {K. Y.} and Lee, {B. D.} and Kuo, {H. C.} and Kuo, {S. Y.} and Leung, {K. M.} and Wang, {S. C.}",

year = "2008",

month = jul,

day = "25",

doi = "10.1016/j.mseb.2008.07.002",

language = "English (US)",

volume = "151",

pages = "205--209",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching

AU - Huang, H. W.

AU - Lin, C. H.

AU - Yu, C. C.

AU - Lee, K. Y.

AU - Lee, B. D.

AU - Kuo, H. C.

AU - Kuo, S. Y.

AU - Leung, K. M.

AU - Wang, S. C.

PY - 2008/7/25

Y1 - 2008/7/25

N2 - The GaN-based thin-film vertical-injection LEDs (VLEDs) with GaN nano-cone structures are fabricated and presented. Under the process conditions of fixed Cl2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W, the GaN nano-cone structures are self-assembly formed with variable density of 1.5 × 107 to 1.4 × 109 cm-2 and variable depth of 0.56-1.34 μm when varying the ICP chamber pressure. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power of our thin-film LED with a specific GaN nano-cone structure reaches 224 mW which is enhanced by 160% when compared with the output power of conventional VLED. In addition, the corresponding light radiation pattern shows much higher light intensity due to the strong light scattering effect by the formed nano-cone structure.

AB - The GaN-based thin-film vertical-injection LEDs (VLEDs) with GaN nano-cone structures are fabricated and presented. Under the process conditions of fixed Cl2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W, the GaN nano-cone structures are self-assembly formed with variable density of 1.5 × 107 to 1.4 × 109 cm-2 and variable depth of 0.56-1.34 μm when varying the ICP chamber pressure. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power of our thin-film LED with a specific GaN nano-cone structure reaches 224 mW which is enhanced by 160% when compared with the output power of conventional VLED. In addition, the corresponding light radiation pattern shows much higher light intensity due to the strong light scattering effect by the formed nano-cone structure.

KW - Inductively coupled plasma (ICP)

KW - Light-emitting diode (LED)

KW - Nano-cone

UR - http://www.scopus.com/inward/record.url?scp=55049131904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55049131904&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2008.07.002

DO - 10.1016/j.mseb.2008.07.002

M3 - Article

AN - SCOPUS:55049131904

SN - 0921-5107

VL - 151

SP - 205

EP - 209

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching

Abstract

Keywords

ASJC Scopus subject areas

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