Investigation of InGaN/GaN power chip light emitting diodes with TiO 2/SiO2 omnidirectional reflector

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, H. C. Kuo, K. M. Leung, S. C. Wang

    Research output: Contribution to journalArticle

    Abstract

    Enhancements of light extraction of GaN-based power chip (PC) LEDs with and without rough surface on p-GaN and TiO2/SiO2 omnidirectional reflector (ODR) on the bottom are presented. Motivated by phosphor-conversion white light applications, the peak-emitting wavelength of our studied PC LEDs is chosen to be 455 nm and the fabricated ODR is designed for the same wavelength regime. At a driving current of 350 mA and a chip size of 1 mm × 1 mm on a TO-can package, the light output power of the PC LED with ODR on the bottom and pit type of rough surface on p-GaN is enhanced by 67% when compared with the same device without ODR and rough surface. Furthermore, by examining the radiation patterns, the PC LED with the ODR and rough surface shows stronger enhancement around the vertical direction. Our results provide promising potential to increase output powers of commercial light emitting devices, especially for white light applications.

    Original languageEnglish (US)
    Article number125006
    JournalSemiconductor Science and Technology
    Volume23
    Issue number12
    DOIs
    StatePublished - Dec 1 2008

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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