Investigation of InGaN/GaN power chip light emitting diodes with TiO 2/SiO2 omnidirectional reflector

H. W. Huang; C. H. Lin; C. C. Yu; B. D. Lee; H. C. Kuo; K. M. Leung; S. C. Wang

doi:10.1088/0268-1242/23/12/125006

Investigation of InGaN/GaN power chip light emitting diodes with TiO ₂/SiO₂ omnidirectional reflector

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, H. C. Kuo, K. M. Leung, S. C. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

Enhancements of light extraction of GaN-based power chip (PC) LEDs with and without rough surface on p-GaN and TiO₂/SiO₂ omnidirectional reflector (ODR) on the bottom are presented. Motivated by phosphor-conversion white light applications, the peak-emitting wavelength of our studied PC LEDs is chosen to be 455 nm and the fabricated ODR is designed for the same wavelength regime. At a driving current of 350 mA and a chip size of 1 mm × 1 mm on a TO-can package, the light output power of the PC LED with ODR on the bottom and pit type of rough surface on p-GaN is enhanced by 67% when compared with the same device without ODR and rough surface. Furthermore, by examining the radiation patterns, the PC LED with the ODR and rough surface shows stronger enhancement around the vertical direction. Our results provide promising potential to increase output powers of commercial light emitting devices, especially for white light applications.

Original language	English (US)
Article number	125006
Journal	Semiconductor Science and Technology
Volume	23
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/23/12/125006
State	Published - Dec 1 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/23/12/125006

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title = "Investigation of InGaN/GaN power chip light emitting diodes with TiO 2/SiO2 omnidirectional reflector",

abstract = "Enhancements of light extraction of GaN-based power chip (PC) LEDs with and without rough surface on p-GaN and TiO2/SiO2 omnidirectional reflector (ODR) on the bottom are presented. Motivated by phosphor-conversion white light applications, the peak-emitting wavelength of our studied PC LEDs is chosen to be 455 nm and the fabricated ODR is designed for the same wavelength regime. At a driving current of 350 mA and a chip size of 1 mm × 1 mm on a TO-can package, the light output power of the PC LED with ODR on the bottom and pit type of rough surface on p-GaN is enhanced by 67% when compared with the same device without ODR and rough surface. Furthermore, by examining the radiation patterns, the PC LED with the ODR and rough surface shows stronger enhancement around the vertical direction. Our results provide promising potential to increase output powers of commercial light emitting devices, especially for white light applications.",

author = "Huang, {H. W.} and Lin, {C. H.} and Yu, {C. C.} and Lee, {B. D.} and Kuo, {H. C.} and Leung, {K. M.} and Wang, {S. C.}",

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doi = "10.1088/0268-1242/23/12/125006",

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T1 - Investigation of InGaN/GaN power chip light emitting diodes with TiO 2/SiO2 omnidirectional reflector

AU - Huang, H. W.

AU - Lin, C. H.

AU - Yu, C. C.

AU - Lee, B. D.

AU - Kuo, H. C.

AU - Leung, K. M.

AU - Wang, S. C.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Enhancements of light extraction of GaN-based power chip (PC) LEDs with and without rough surface on p-GaN and TiO2/SiO2 omnidirectional reflector (ODR) on the bottom are presented. Motivated by phosphor-conversion white light applications, the peak-emitting wavelength of our studied PC LEDs is chosen to be 455 nm and the fabricated ODR is designed for the same wavelength regime. At a driving current of 350 mA and a chip size of 1 mm × 1 mm on a TO-can package, the light output power of the PC LED with ODR on the bottom and pit type of rough surface on p-GaN is enhanced by 67% when compared with the same device without ODR and rough surface. Furthermore, by examining the radiation patterns, the PC LED with the ODR and rough surface shows stronger enhancement around the vertical direction. Our results provide promising potential to increase output powers of commercial light emitting devices, especially for white light applications.

AB - Enhancements of light extraction of GaN-based power chip (PC) LEDs with and without rough surface on p-GaN and TiO2/SiO2 omnidirectional reflector (ODR) on the bottom are presented. Motivated by phosphor-conversion white light applications, the peak-emitting wavelength of our studied PC LEDs is chosen to be 455 nm and the fabricated ODR is designed for the same wavelength regime. At a driving current of 350 mA and a chip size of 1 mm × 1 mm on a TO-can package, the light output power of the PC LED with ODR on the bottom and pit type of rough surface on p-GaN is enhanced by 67% when compared with the same device without ODR and rough surface. Furthermore, by examining the radiation patterns, the PC LED with the ODR and rough surface shows stronger enhancement around the vertical direction. Our results provide promising potential to increase output powers of commercial light emitting devices, especially for white light applications.

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Investigation of InGaN/GaN power chip light emitting diodes with TiO ₂/SiO₂ omnidirectional reflector

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