Ion mixing in Ag-films on Si-substrates induced by a high fluence 40Ar+ beam with a flux of 0.2 μA/cm2

N. M. Masoud, D. E. Arafah, K. H. Becker

Research output: Contribution to journalArticlepeer-review


Characteristics of ion mixing in thin Ag-films deposited onto Si-substrates were studied using the Rutherford backscattering (RBS) technique. The mixing was induced by a 400 keV 40Ar+ beam with a flux of 0.2 μA/cm2 and fluences of up to 4 × 1017 ions/cm2. The concentration of Ag and Si atoms and their distributions in depth within the mixed region were determined. The RBS data indicate a clear broadening of the interfacial edges of Ag and Si distributions caused by atomic intermixing of the interface for doses above 7 × 1016 ions/cm2. The size of the intermixed region increases with increasing Ar fluence. Experimental findings also indicated that radiation-enhanced diffusion had not been totally eliminated. The mixing efficiency and diffusivity of Si and Ag were determined. Theoretical models were used to describe the mixing process. A comparison of our data with theory revealed that Ag diffuses in Si according to a local 'thermal spike' model. The above results when compared with our earlier studies of the Ag/Si system at a flux of 0.6 μA/cm2 under otherwise similar conditions indicate that the mixing in this system is flux dependent.

Original languageEnglish (US)
Pages (from-to)64-72
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2
StatePublished - Dec 2002


  • Alloys
  • Diffusion and migration
  • Ion bombardment
  • Metallic films
  • Radiation damage
  • Surface defects
  • Surface diffusion
  • Surface thermodynamics

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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