Abstract
Characteristics of ion mixing in thin Ag-films deposited onto Si-substrates were studied using the Rutherford backscattering (RBS) technique. The mixing was induced by a 400 keV 40Ar+ beam with a flux of 0.2 μA/cm2 and fluences of up to 4 × 1017 ions/cm2. The concentration of Ag and Si atoms and their distributions in depth within the mixed region were determined. The RBS data indicate a clear broadening of the interfacial edges of Ag and Si distributions caused by atomic intermixing of the interface for doses above 7 × 1016 ions/cm2. The size of the intermixed region increases with increasing Ar fluence. Experimental findings also indicated that radiation-enhanced diffusion had not been totally eliminated. The mixing efficiency and diffusivity of Si and Ag were determined. Theoretical models were used to describe the mixing process. A comparison of our data with theory revealed that Ag diffuses in Si according to a local 'thermal spike' model. The above results when compared with our earlier studies of the Ag/Si system at a flux of 0.6 μA/cm2 under otherwise similar conditions indicate that the mixing in this system is flux dependent.
Original language | English (US) |
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Pages (from-to) | 64-72 |
Number of pages | 9 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 198 |
Issue number | 1-2 |
DOIs | |
State | Published - Dec 2002 |
Keywords
- Alloys
- Diffusion and migration
- Ion bombardment
- Metallic films
- Radiation damage
- Surface defects
- Surface diffusion
- Surface thermodynamics
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation