Island dynamics and the level set method for epitaxial growth

R. E. Caflisch; M. F. Gyure; B. Merriman; S. J. Osher; C. Ratsch; D. D. Vvedensky; J. J. Zinck

doi:10.1016/S0893-9659(99)00026-9

Island dynamics and the level set method for epitaxial growth

R. E. Caflisch, M. F. Gyure, B. Merriman, S. J. Osher, C. Ratsch, D. D. Vvedensky, J. J. Zinck

Mathematics

Research output: Contribution to journal › Article › peer-review

Abstract

We adapt the level set method to simulate the growth of thin films described by the motion of island boundaries. This island dynamics model involves a continuum in the lateral directions, but retains atomic scale discreteness in the growth direction. Several choices for the island boundary velocity are discussed, and computations of the island dynamics model using the level set method are presented.

Original language	English (US)
Pages (from-to)	13-22
Number of pages	10
Journal	Applied Mathematics Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1016/S0893-9659(99)00026-9
State	Published - May 1999

Keywords

Epitaxy
Island dynamics
Level set method
Thin films

ASJC Scopus subject areas

Applied Mathematics

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10.1016/S0893-9659(99)00026-9

Cite this

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title = "Island dynamics and the level set method for epitaxial growth",

abstract = "We adapt the level set method to simulate the growth of thin films described by the motion of island boundaries. This island dynamics model involves a continuum in the lateral directions, but retains atomic scale discreteness in the growth direction. Several choices for the island boundary velocity are discussed, and computations of the island dynamics model using the level set method are presented.",

keywords = "Epitaxy, Island dynamics, Level set method, Thin films",

author = "Caflisch, {R. E.} and Gyure, {M. F.} and B. Merriman and Osher, {S. J.} and C. Ratsch and Vvedensky, {D. D.} and Zinck, {J. J.}",

note = "Funding Information: The performance of many modern electronic and optoelectronic devices depends critically on the ability to fabricate high-quality semiconductor thin films and interfaces. These structures Research supported in part by NSF and DARPA through Grant NSF-DMS9615854 as part of the Virtual Integrated Prototyping (VIP) Initiative.",

year = "1999",

month = may,

doi = "10.1016/S0893-9659(99)00026-9",

language = "English (US)",

volume = "12",

pages = "13--22",

journal = "Applied Mathematics Letters",

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TY - JOUR

T1 - Island dynamics and the level set method for epitaxial growth

AU - Caflisch, R. E.

AU - Gyure, M. F.

AU - Merriman, B.

AU - Osher, S. J.

AU - Ratsch, C.

AU - Vvedensky, D. D.

AU - Zinck, J. J.

N1 - Funding Information: The performance of many modern electronic and optoelectronic devices depends critically on the ability to fabricate high-quality semiconductor thin films and interfaces. These structures Research supported in part by NSF and DARPA through Grant NSF-DMS9615854 as part of the Virtual Integrated Prototyping (VIP) Initiative.

PY - 1999/5

Y1 - 1999/5

N2 - We adapt the level set method to simulate the growth of thin films described by the motion of island boundaries. This island dynamics model involves a continuum in the lateral directions, but retains atomic scale discreteness in the growth direction. Several choices for the island boundary velocity are discussed, and computations of the island dynamics model using the level set method are presented.

AB - We adapt the level set method to simulate the growth of thin films described by the motion of island boundaries. This island dynamics model involves a continuum in the lateral directions, but retains atomic scale discreteness in the growth direction. Several choices for the island boundary velocity are discussed, and computations of the island dynamics model using the level set method are presented.

KW - Epitaxy

KW - Island dynamics

KW - Level set method

KW - Thin films

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DO - 10.1016/S0893-9659(99)00026-9

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VL - 12

SP - 13

EP - 22

JO - Applied Mathematics Letters

JF - Applied Mathematics Letters

IS - 4

ER -

Island dynamics and the level set method for epitaxial growth

Abstract

Keywords

ASJC Scopus subject areas

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