Laterally Modulated 2D Electron System in the Extreme Quantum Limit

S. Melinte, Mona Berciu, Chenggang Zhou, E. Tutuc, S. J. Papadakis, C. Harrison, E. P. De Poortere, Mingshaw Wu, P. M. Chaikin, M. Shayegan, R. N. Bhatt, R. A. Register

    Research output: Contribution to journalArticle

    Abstract

    The low-T magnetotransport measurements in a GaAs/AlGaAs two-dimensional electron system (2DES), at a distance of 32 nm below the surface were analyzed. The sample studied was grown by molecular beam epitaxy, and consisted of a GaAs/Al0.3Ga0.7As heterostructure with a 2DES. The diagonal resistivity displayed a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation, for low Landau level fillings v. The data was explained by the theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES.

    Original languageEnglish (US)
    Article number036802
    Pages (from-to)368021-368024
    Number of pages4
    JournalPhysical Review Letters
    Volume92
    Issue number3
    StatePublished - Jan 23 2004

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Laterally Modulated 2D Electron System in the Extreme Quantum Limit'. Together they form a unique fingerprint.

  • Cite this

    Melinte, S., Berciu, M., Zhou, C., Tutuc, E., Papadakis, S. J., Harrison, C., De Poortere, E. P., Wu, M., Chaikin, P. M., Shayegan, M., Bhatt, R. N., & Register, R. A. (2004). Laterally Modulated 2D Electron System in the Extreme Quantum Limit. Physical Review Letters, 92(3), 368021-368024. [036802].