Localisation in impurity bands

L. Fleishman, D. L. Stein

    Research output: Contribution to journalArticlepeer-review


    The criteria for localisation in a model that is suitable for non-interacting electrons in an impurity band is investigated. It is shown that the critical density of impurities nc is given by nca H13/=f(W) where aH is a measure of the range of the overlap integral between impurities, and W the diagonal disorder. The apparent discrepancy in the results of Debney and Economou and Antonio (1977) is shown to be model dependent. It is shown that an increase in W leads to an increase in nc as expected from the results of Fritzsche (1979). The case of nearest-neighbour off-diagonal disorder is one dimension is also treated.

    Original languageEnglish (US)
    Article number022
    Pages (from-to)4817-4823
    Number of pages7
    JournalJournal of Physics C: Solid State Physics
    Issue number22
    StatePublished - 1979

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • General Engineering
    • General Physics and Astronomy


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