Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress

B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, A. Akhavan, M. Robertson

Research output: Contribution to journalConference article

Abstract

Low temperature copper-induced crystallization of amorphous germanium (a-Ge) has been significantly enhanced by applying mechanical compressive stress during thermal post-treatment. Manipulation of this technique, alongside with proper patterning of the a-Ge layer before thermo-mechanical process, has led to growth of device-quality poly-Ge layer on flexible PET substrate at temperatures as low as 130°C. Flexibility of the substrate allows the efficient application of uniaxial compressive stress by bending the PET sheets inward. Effects of compressive stress and ultimate crystallization of the Ge layer has been verified by electrical sheet resistance and Hall mobility measurements, and analyzed by XRD, SEM, TEM and RAMAN spectroscopy.

Original languageEnglish (US)
Pages (from-to)183-188
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume769
StatePublished - Dec 1 2003
EventFlexible Electronics - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 22 2003Apr 25 2003

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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