Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress

B. Hekmatshoar; D. Shahrjerdi; S. Mohajerzadeh; A. Khakifirooz; A. Akhavan; M. Robertson

Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress

B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, A. Akhavan, M. Robertson

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Low temperature copper-induced crystallization of amorphous germanium (a-Ge) has been significantly enhanced by applying mechanical compressive stress during thermal post-treatment. Manipulation of this technique, alongside with proper patterning of the a-Ge layer before thermo-mechanical process, has led to growth of device-quality poly-Ge layer on flexible PET substrate at temperatures as low as 130°C. Flexibility of the substrate allows the efficient application of uniaxial compressive stress by bending the PET sheets inward. Effects of compressive stress and ultimate crystallization of the Ge layer has been verified by electrical sheet resistance and Hall mobility measurements, and analyzed by XRD, SEM, TEM and RAMAN spectroscopy.

Original language	English (US)
Pages (from-to)	183-188
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	769
State	Published - 2003
Event	Flexible Electronics - Materials and Device Technology - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress",

abstract = "Low temperature copper-induced crystallization of amorphous germanium (a-Ge) has been significantly enhanced by applying mechanical compressive stress during thermal post-treatment. Manipulation of this technique, alongside with proper patterning of the a-Ge layer before thermo-mechanical process, has led to growth of device-quality poly-Ge layer on flexible PET substrate at temperatures as low as 130°C. Flexibility of the substrate allows the efficient application of uniaxial compressive stress by bending the PET sheets inward. Effects of compressive stress and ultimate crystallization of the Ge layer has been verified by electrical sheet resistance and Hall mobility measurements, and analyzed by XRD, SEM, TEM and RAMAN spectroscopy.",

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year = "2003",

language = "English (US)",

volume = "769",

pages = "183--188",

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T1 - Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress

AU - Hekmatshoar, B.

AU - Shahrjerdi, D.

AU - Mohajerzadeh, S.

AU - Khakifirooz, A.

AU - Akhavan, A.

AU - Robertson, M.

PY - 2003

Y1 - 2003

N2 - Low temperature copper-induced crystallization of amorphous germanium (a-Ge) has been significantly enhanced by applying mechanical compressive stress during thermal post-treatment. Manipulation of this technique, alongside with proper patterning of the a-Ge layer before thermo-mechanical process, has led to growth of device-quality poly-Ge layer on flexible PET substrate at temperatures as low as 130°C. Flexibility of the substrate allows the efficient application of uniaxial compressive stress by bending the PET sheets inward. Effects of compressive stress and ultimate crystallization of the Ge layer has been verified by electrical sheet resistance and Hall mobility measurements, and analyzed by XRD, SEM, TEM and RAMAN spectroscopy.

AB - Low temperature copper-induced crystallization of amorphous germanium (a-Ge) has been significantly enhanced by applying mechanical compressive stress during thermal post-treatment. Manipulation of this technique, alongside with proper patterning of the a-Ge layer before thermo-mechanical process, has led to growth of device-quality poly-Ge layer on flexible PET substrate at temperatures as low as 130°C. Flexibility of the substrate allows the efficient application of uniaxial compressive stress by bending the PET sheets inward. Effects of compressive stress and ultimate crystallization of the Ge layer has been verified by electrical sheet resistance and Hall mobility measurements, and analyzed by XRD, SEM, TEM and RAMAN spectroscopy.

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AN - SCOPUS:1542364435

SN - 0272-9172

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EP - 188

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Flexible Electronics - Materials and Device Technology

Y2 - 22 April 2003 through 25 April 2003

ER -

Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress

Abstract

ASJC Scopus subject areas

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