Abstract
Stress-assisted Cu-induced crystallization of α-Ge was carried out, and the effects of external stress and specially the compressive one were observed by XRD, SEM, TEM, and Hall mobility measurement. External compressive stress was applied to reinforce the internal one and finally compensate for a considerable temperature reduction.
Original language | English (US) |
---|---|
Pages (from-to) | 752-755 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 21 |
Issue number | 3 |
DOIs | |
State | Published - May 2003 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films