Low-temperature epitaxy of compressively strained silicon directly on silicon substrates

D. Shahrjerdi, B. Hekmatshoar, S. W. Bedell, M. Hopstaken, D. K. Sadana

Research output: Contribution to journalArticlepeer-review

Abstract

We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150°C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, triple-axis x-ray reciprocal-space mapping of the samples indicates that (i) the epitaxial layers are fully strained and (ii) the strain is graded. Secondary-ion mass spectrometry depth profiling reveals the correlation between the strain gradient and the hydrogen concentration profile within the epitaxial layers. Furthermore, heavily phosphorus-doped layers with an electrically active doping concentration of ∼2 × 10 20 cm -3 were obtained at such low growth temperatures.

Original languageEnglish (US)
Pages (from-to)494-497
Number of pages4
JournalJournal of Electronic Materials
Volume41
Issue number3
DOIs
StatePublished - Mar 2012

Keywords

  • Compressive strain
  • Epitaxial growth
  • Heavily doped
  • Low temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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