Low temperature fabrication of high mobility poly-Ge TFTs on plastic

D. Shahrjerdi; B. Hekmatshoar; S. Mohajerzadeh; S. Darbari

doi:10.1109/ICM.2003.237966

Low temperature fabrication of high mobility poly-Ge TFTs on plastic

D. Shahrjerdi, B. Hekmatshoar, S. Mohajerzadeh, S. Darbari

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Fabrication of depletion-mode poly Ge TFTs with field-effect hole mobility of 120 cm²/V-s on flexible PET substrates is reported. The fabricated TFTs show an ON/OFF ratio of 4×l0⁴. All of the fabrication steps have been done at temperatures as low as 130°C. A recently established stress-assisted copper-induced crystallization technique has been exploited to crystallize the amorphous Ge (a-Ge) layer. Mechanical compressive stress has been applied to the Ge layer by bending the flexible substrate inward. Proper patterning of the a-Ge layer before thermo-mechanical post-treatment alleviates the density of cracks induced in the Ge layer as the main repercussion of the interfacial stress.

Original language	English (US)
Title of host publication	Proceedings of the 15th International Conference on Microelectronics, ICM 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	361-364
Number of pages	4
ISBN (Electronic)	9770520101
DOIs	https://doi.org/10.1109/ICM.2003.237966
State	Published - 2003
Event	15th International Conference on Microelectronics, ICM 2003 - Cairo, Egypt Duration: Dec 9 2003 → Dec 11 2003

Publication series

Name	Proceedings of the International Conference on Microelectronics, ICM
Volume	2003-January

Other

Other	15th International Conference on Microelectronics, ICM 2003
Country/Territory	Egypt
City	Cairo
Period	12/9/03 → 12/11/03

Keywords

Compressive stress
Crystallization
Displays
Driver circuits
Fabrication
Plastics
Positron emission tomography
Substrates
Temperature
Thin film transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICM.2003.237966

Cite this

Shahrjerdi, D., Hekmatshoar, B., Mohajerzadeh, S., & Darbari, S. (2003). Low temperature fabrication of high mobility poly-Ge TFTs on plastic. In Proceedings of the 15th International Conference on Microelectronics, ICM 2003 (pp. 361-364). Article 1287834 (Proceedings of the International Conference on Microelectronics, ICM; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2003.237966

Low temperature fabrication of high mobility poly-Ge TFTs on plastic. / Shahrjerdi, D.; Hekmatshoar, B.; Mohajerzadeh, S. et al.
Proceedings of the 15th International Conference on Microelectronics, ICM 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 361-364 1287834 (Proceedings of the International Conference on Microelectronics, ICM; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shahrjerdi, D, Hekmatshoar, B, Mohajerzadeh, S & Darbari, S 2003, Low temperature fabrication of high mobility poly-Ge TFTs on plastic. in Proceedings of the 15th International Conference on Microelectronics, ICM 2003., 1287834, Proceedings of the International Conference on Microelectronics, ICM, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 361-364, 15th International Conference on Microelectronics, ICM 2003, Cairo, Egypt, 12/9/03. https://doi.org/10.1109/ICM.2003.237966

Shahrjerdi D, Hekmatshoar B, Mohajerzadeh S, Darbari S. Low temperature fabrication of high mobility poly-Ge TFTs on plastic. In Proceedings of the 15th International Conference on Microelectronics, ICM 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 361-364. 1287834. (Proceedings of the International Conference on Microelectronics, ICM). doi: 10.1109/ICM.2003.237966

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title = "Low temperature fabrication of high mobility poly-Ge TFTs on plastic",

abstract = "Fabrication of depletion-mode poly Ge TFTs with field-effect hole mobility of 120 cm2/V-s on flexible PET substrates is reported. The fabricated TFTs show an ON/OFF ratio of 4×l04. All of the fabrication steps have been done at temperatures as low as 130°C. A recently established stress-assisted copper-induced crystallization technique has been exploited to crystallize the amorphous Ge (a-Ge) layer. Mechanical compressive stress has been applied to the Ge layer by bending the flexible substrate inward. Proper patterning of the a-Ge layer before thermo-mechanical post-treatment alleviates the density of cracks induced in the Ge layer as the main repercussion of the interfacial stress.",

keywords = "Compressive stress, Crystallization, Displays, Driver circuits, Fabrication, Plastics, Positron emission tomography, Substrates, Temperature, Thin film transistors",

author = "D. Shahrjerdi and B. Hekmatshoar and S. Mohajerzadeh and S. Darbari",

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N2 - Fabrication of depletion-mode poly Ge TFTs with field-effect hole mobility of 120 cm2/V-s on flexible PET substrates is reported. The fabricated TFTs show an ON/OFF ratio of 4×l04. All of the fabrication steps have been done at temperatures as low as 130°C. A recently established stress-assisted copper-induced crystallization technique has been exploited to crystallize the amorphous Ge (a-Ge) layer. Mechanical compressive stress has been applied to the Ge layer by bending the flexible substrate inward. Proper patterning of the a-Ge layer before thermo-mechanical post-treatment alleviates the density of cracks induced in the Ge layer as the main repercussion of the interfacial stress.

AB - Fabrication of depletion-mode poly Ge TFTs with field-effect hole mobility of 120 cm2/V-s on flexible PET substrates is reported. The fabricated TFTs show an ON/OFF ratio of 4×l04. All of the fabrication steps have been done at temperatures as low as 130°C. A recently established stress-assisted copper-induced crystallization technique has been exploited to crystallize the amorphous Ge (a-Ge) layer. Mechanical compressive stress has been applied to the Ge layer by bending the flexible substrate inward. Proper patterning of the a-Ge layer before thermo-mechanical post-treatment alleviates the density of cracks induced in the Ge layer as the main repercussion of the interfacial stress.

KW - Compressive stress

KW - Crystallization

KW - Displays

KW - Driver circuits

KW - Fabrication

KW - Plastics

KW - Positron emission tomography

KW - Substrates

KW - Temperature

KW - Thin film transistors

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BT - Proceedings of the 15th International Conference on Microelectronics, ICM 2003

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 9 December 2003 through 11 December 2003

ER -

Low temperature fabrication of high mobility poly-Ge TFTs on plastic

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