Low Temperature Ge Surface Passivation Formed using In-situ NH3/N2 PECVD Nitration for High Quality Ge-MOS Capacitors

Ghada H. Dushaq, Mahmoud Rasras, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationFrontiers in Theoretical and Applied Physics Conference
Place of PublicationUnited Arab Emirates
StatePublished - Feb 2017

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