Low Temperature Ge Surface Passivation Formed using In-situ NH3/N2 PECVD Nitration for High Quality Ge-MOS Capacitors

Ghada H. Dushaq, Mahmoud Rasras, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Frontiers in Theoretical and Applied Physics Conference
Place of Publication	United Arab Emirates
Publisher	AUS
State	Published - Feb 2017

Cite this

@inproceedings{202ea02941e24a68a8d0adcb3b2e7b6f,

title = "Low Temperature Ge Surface Passivation Formed using In-situ NH3/N2 PECVD Nitration for High Quality Ge-MOS Capacitors",

author = "Dushaq, {Ghada H.} and Mahmoud Rasras and Ammar Nayfeh",

year = "2017",

month = feb,

language = "English (US)",

booktitle = "Frontiers in Theoretical and Applied Physics Conference",

publisher = "AUS",

}