Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors

Bahman Hekmatshoar, Arash Khajooeizadeh, Shams Mohajerzadeh, Davood Shahrjerdi, Ebrahim Asl-Soleimani

Research output: Contribution to journalArticle

Abstract

Device-quality poly-Ge layers were grown at temperatures as low as 200 °C by successive hydrogenation and annealing steps, with no need to any metal incorporation. Hydrogenation is performed in a PECVD apparatus with 150 W RF hydrogen plasma and annealing is carried out in the same system in N 2 ambient. As a result, grains of the order of 100 nm are formed in the Ge layer. It has been observed that hydrogenation at high temperatures may be destructive to the Ge layer. Successive hydrogenation and annealing at respective temperatures of ISO and 200 °C would result in a device-quality poly crystalline Ge layer which has been employed for fabrication of depletion-mode thin-film transistors. These TFTs show a field-effect mobility of 80cm2/Vs for holes and an ON/OFF ratio of more than 103, indicating the feasibility of this technique for applications in large-area electronics.

Original languageEnglish (US)
Pages (from-to)419-422
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume7
Issue number4-6 SPEC. ISS.
DOIs
StatePublished - Dec 10 2004

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Keywords

  • Hydrogenation
  • Low-temperature processing
  • Non-metal-induced crystallization
  • Poly-ge tfts

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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