TY - JOUR
T1 - Low-temperature plasma enhanced chemical vapor deposition of SiO 2
AU - Deshmukh, Shashank C.
AU - Aydil, Eray S.
PY - 1994
Y1 - 1994
N2 - Silicon dioxide (SiO2) films, with qualities approaching to those of thermal oxide, were deposited at 40°C in a helical resonator plasma reactor from tetraethylorthosilicate (TEOS) and oxygen discharge. The films were characterized using transmission infrared spectroscopy, variable angle spectroscopic ellisometry, and wet etch rate measurements. It was found that the TEOS/O2 ratio, @FR, in plasma enhanced chemical vapor deposition of SiO2 is as important a parameter as the substrate temperature. Using low TEOS/O2 ratio (@FR <1:20), high quality SiO2 films could be deposited by PECVD at room temperature. At high TEOS/O2 ratio, particularly at low temperature, ethoxy ligands of the TEOS molecule are incorporated into the film disrupting the connectedness of the SiO4 tetrahedra resulting in porous, low density films with high OH content.
AB - Silicon dioxide (SiO2) films, with qualities approaching to those of thermal oxide, were deposited at 40°C in a helical resonator plasma reactor from tetraethylorthosilicate (TEOS) and oxygen discharge. The films were characterized using transmission infrared spectroscopy, variable angle spectroscopic ellisometry, and wet etch rate measurements. It was found that the TEOS/O2 ratio, @FR, in plasma enhanced chemical vapor deposition of SiO2 is as important a parameter as the substrate temperature. Using low TEOS/O2 ratio (@FR <1:20), high quality SiO2 films could be deposited by PECVD at room temperature. At high TEOS/O2 ratio, particularly at low temperature, ethoxy ligands of the TEOS molecule are incorporated into the film disrupting the connectedness of the SiO4 tetrahedra resulting in porous, low density films with high OH content.
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U2 - 10.1063/1.112475
DO - 10.1063/1.112475
M3 - Article
AN - SCOPUS:0001601849
SN - 0003-6951
VL - 65
SP - 3185
EP - 3187
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 25
ER -