Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates

B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, A. Tonita, J. C. Bennett

Research output: Contribution to journalArticle


The mechanical-compressive stress's effects during low-temperature annealing was investigated for the crystallization of SiGe alloys on plastic substrates. The partial crystallization of the film was observed to occur at a temperature of 180°C, under an equivalent compressive strain of 0.05%. Rutherford backscattering spectroscopy was used to compute the atomic percentage of Si in the SiGe alloy and it was found to be 35%. The results indicate that without the application of the compressive strain, crystallization can not be observed for either systems at the temperatures investigated.

Original languageEnglish (US)
Pages (from-to)856-858
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1 2004


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this