Abstract
The mechanical-compressive stress's effects during low-temperature annealing was investigated for the crystallization of SiGe alloys on plastic substrates. The partial crystallization of the film was observed to occur at a temperature of 180°C, under an equivalent compressive strain of 0.05%. Rutherford backscattering spectroscopy was used to compute the atomic percentage of Si in the SiGe alloy and it was found to be 35%. The results indicate that without the application of the compressive strain, crystallization can not be observed for either systems at the temperatures investigated.
Original language | English (US) |
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Pages (from-to) | 856-858 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 22 |
Issue number | 3 |
DOIs | |
State | Published - May 2004 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films