Magnetoresistance and Hall effect in tetramethyl-tetraselenafulvalene-phosphorus hexafloride [(TMTSF)2PF6]

P. M. Chaikin, P. Haen, E. M. Engler, R. L. Greene

    Research output: Contribution to journalArticlepeer-review


    We have measured the magnetoresistance and Hall effect of tetramethyl-tetraselena-fulvalene-phosphorus hexafloride as a function of temperature, magnetic field for several orientations, and electric field. For temperatures well below the metal-insulator transition we find a large positive Hall coefficient and positive magnetoresistance, indicating carrier mobilities greater than 105 cm2/V sec at 4.2 K. The magnetoresistance is highly anisotropic for field orientations in theplane perpendicular to the highly conducting axis, indicating a quasi-two-dimensional band structure. The nonlinear conductivity seen with small electric fields below the metal-insulator transition has approximately the same magnetic-field behavior as does the Ohmic conductivity at the same temperature.

    Original languageEnglish (US)
    Pages (from-to)7155-7161
    Number of pages7
    JournalPhysical Review B
    Issue number12
    StatePublished - 1981

    ASJC Scopus subject areas

    • Condensed Matter Physics


    Dive into the research topics of 'Magnetoresistance and Hall effect in tetramethyl-tetraselenafulvalene-phosphorus hexafloride [(TMTSF)2PF6]'. Together they form a unique fingerprint.

    Cite this