Magnetotransport properties of individual InAs nanowires

Sajal Dhara, Hari S. Solanki, Vibhor Singh, Arjun Narayanan, Prajakta Chaudhari, Mahesh Gokhale, Arnab Bhattacharya, Mandar M. Deshmukh

Research output: Contribution to journalArticlepeer-review


We probe the magnetotransport properties of individual InAs nanowires in a field-effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization description in diffusive conductors. The weak localization correction is modified to weak antilocalization as the gate voltage is increased. We show that the gate voltage can be used to tune the phase coherence length (l) and spin-orbit length (lso) by a factor of 2. In the high field and low-temperature regime we observe that the mobility of devices can be modified significantly as a function of magnetic field. We argue that the role of skipping orbits and the nature of surface scattering is essential in understanding high-field magnetotransport in nanowires.

Original languageEnglish (US)
Article number121311
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
StatePublished - Mar 3 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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