Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

Sumit Agarwal, Saravanapriyan Sriraman, Akihiro Takano, M. C.M. Van de Sanden, Eray S. Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticlepeer-review

Abstract

Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley-Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.

Original languageEnglish (US)
Pages (from-to)L469-L474
JournalSurface Science
Volume515
Issue number1
DOIs
StatePublished - Aug 2002

Keywords

  • Amorphous surfaces
  • Hydrogen atom
  • Infrared absorption spectroscopy
  • Molecular dynamics
  • Plasma processing
  • Semiconductor-semiconductor thin film structures
  • Silicon
  • Surface chemical reaction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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