Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

Sumit Agarwal; Saravanapriyan Sriraman; Akihiro Takano; M. C.M. Van de Sanden; Eray S. Aydil; Dimitrios Maroudas

doi:10.1016/S0039-6028(02)01879-4

Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

Sumit Agarwal, Saravanapriyan Sriraman, Akihiro Takano, M. C.M. Van de Sanden, Eray S. Aydil, Dimitrios Maroudas

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley-Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H₂(D₂) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.

Original language	English (US)
Pages (from-to)	L469-L474
Journal	Surface Science
Volume	515
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(02)01879-4
State	Published - Aug 2002

Keywords

Amorphous surfaces
Hydrogen atom
Infrared absorption spectroscopy
Molecular dynamics
Plasma processing
Semiconductor-semiconductor thin film structures
Silicon
Surface chemical reaction

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(02)01879-4

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@article{411ab2c084f541339fd010a4c058727f,

title = "Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces",

abstract = "Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley-Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.",

keywords = "Amorphous surfaces, Hydrogen atom, Infrared absorption spectroscopy, Molecular dynamics, Plasma processing, Semiconductor-semiconductor thin film structures, Silicon, Surface chemical reaction",

author = "Sumit Agarwal and Saravanapriyan Sriraman and Akihiro Takano and {Van de Sanden}, {M. C.M.} and Aydil, {Eray S.} and Dimitrios Maroudas",

note = "Funding Information: This work was supported by the NSF/DoE Partnership for Basic Plasma Science and Engineering (Awards No. DMR-9713280 and ECS-0078711) and by the Camille & Henry Dreyfus Foundation through Camille Dreyfus Teacher–Scholar Awards to two of the authors (E.S.A. and D.M.). A.T. is supported by the Fuji Electric Co., Ltd.",

year = "2002",

month = aug,

doi = "10.1016/S0039-6028(02)01879-4",

language = "English (US)",

volume = "515",

pages = "L469--L474",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

AU - Agarwal, Sumit

AU - Sriraman, Saravanapriyan

AU - Takano, Akihiro

AU - Van de Sanden, M. C.M.

AU - Aydil, Eray S.

AU - Maroudas, Dimitrios

N1 - Funding Information: This work was supported by the NSF/DoE Partnership for Basic Plasma Science and Engineering (Awards No. DMR-9713280 and ECS-0078711) and by the Camille & Henry Dreyfus Foundation through Camille Dreyfus Teacher–Scholar Awards to two of the authors (E.S.A. and D.M.). A.T. is supported by the Fuji Electric Co., Ltd.

PY - 2002/8

Y1 - 2002/8

N2 - Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley-Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.

AB - Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley-Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films.

KW - Amorphous surfaces

KW - Hydrogen atom

KW - Infrared absorption spectroscopy

KW - Molecular dynamics

KW - Plasma processing

KW - Semiconductor-semiconductor thin film structures

KW - Silicon

KW - Surface chemical reaction

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U2 - 10.1016/S0039-6028(02)01879-4

DO - 10.1016/S0039-6028(02)01879-4

M3 - Article

AN - SCOPUS:0036682882

SN - 0039-6028

VL - 515

SP - L469-L474

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

Abstract

Keywords

ASJC Scopus subject areas

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