Metastability of hydrogenated amorphous silicon passivation on crystalline silicon and implication to photovoltaic devices

Bahman Hekmatshoar, Davood Shahrjerdi, Marinus Hopstaken, Devendra Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present experimental evidence that the surface passivation of crystalline silicon (c-Si) by hydrogenated amorphous silicon (a-Si:H) is metastable. Photo-conductance decay measurements of the effective minority carrier lifetime in c-Si show that the surface recombination velocity of the carriers at the c-Si/a-Si:H interface is reduced by annealing at temperatures up to ∼ 350°C, but relaxed to higher values after further thermal treatment. The relaxation is thermally activated and faster at higher temperatures. We attribute this phenomenon to the thermal equilibration of charged defects in a-Si:H. Our finding suggests that a-Si:H passivation may require thermal stabilization for realizing reliable photovoltaic devices.

Original languageEnglish (US)
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
Pages5E.5.1-5E.5.4
DOIs
StatePublished - 2011
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: Apr 10 2011Apr 14 2011

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period4/10/114/14/11

Keywords

  • carrier lifetime
  • hydrogenated amorphous silicon
  • metastability
  • surface passivation
  • thermal equilibrium

ASJC Scopus subject areas

  • Engineering(all)

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