Microwave plasma system for the deposition of diamond films

E. Koretzky; S. P. Kuo; S. C. Kuo

Microwave plasma system for the deposition of diamond films

E. Koretzky, S. P. Kuo, S. C. Kuo

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A microwave plasma source is designed for the chemical vapor deposition of diamond films. Microwaves provided by a magnetron (2.45GHz, 300W) are fed into a cylindrical cavity through a loop antenna. The cavity can be adjusted to excite the TM₀₁₁ to TM₀₁₃ modes. Using a large cavity (TM_0.13 mode) to reduce the power density, the microwave coupling into the cavity is expected to be more efficient. However, in order to use microwave power effectively, only a small portion of the cavity separated by a glass enclosure to keep the vacuum pressure is used as the reaction chamber. Thus the plasma is produced only in the reaction chamber, and the effect of the plasma loading on the microwave coupling is also minimized. The experimental results indeed show that a very stable plasma can be produced, over a large range of incident power levels.

Original language	English (US)
Pages (from-to)	217
Number of pages	1
Journal	IEEE International Conference on Plasma Science
State	Published - 1996
Event	Proceedings of the 1996 IEEE International Conference on Plasma Science - Boston, MA, USA Duration: Jun 3 1996 → Jun 5 1996

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Microwave plasma system for the deposition of diamond films",

abstract = "A microwave plasma source is designed for the chemical vapor deposition of diamond films. Microwaves provided by a magnetron (2.45GHz, 300W) are fed into a cylindrical cavity through a loop antenna. The cavity can be adjusted to excite the TM011 to TM013 modes. Using a large cavity (TM0.13 mode) to reduce the power density, the microwave coupling into the cavity is expected to be more efficient. However, in order to use microwave power effectively, only a small portion of the cavity separated by a glass enclosure to keep the vacuum pressure is used as the reaction chamber. Thus the plasma is produced only in the reaction chamber, and the effect of the plasma loading on the microwave coupling is also minimized. The experimental results indeed show that a very stable plasma can be produced, over a large range of incident power levels.",

author = "E. Koretzky and Kuo, {S. P.} and Kuo, {S. C.}",

year = "1996",

language = "English (US)",

pages = "217",

journal = "IEEE International Conference on Plasma Science",

issn = "0730-9244",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 IEEE International Conference on Plasma Science ; Conference date: 03-06-1996 Through 05-06-1996",

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T1 - Microwave plasma system for the deposition of diamond films

AU - Koretzky, E.

AU - Kuo, S. P.

AU - Kuo, S. C.

PY - 1996

Y1 - 1996

N2 - A microwave plasma source is designed for the chemical vapor deposition of diamond films. Microwaves provided by a magnetron (2.45GHz, 300W) are fed into a cylindrical cavity through a loop antenna. The cavity can be adjusted to excite the TM011 to TM013 modes. Using a large cavity (TM0.13 mode) to reduce the power density, the microwave coupling into the cavity is expected to be more efficient. However, in order to use microwave power effectively, only a small portion of the cavity separated by a glass enclosure to keep the vacuum pressure is used as the reaction chamber. Thus the plasma is produced only in the reaction chamber, and the effect of the plasma loading on the microwave coupling is also minimized. The experimental results indeed show that a very stable plasma can be produced, over a large range of incident power levels.

AB - A microwave plasma source is designed for the chemical vapor deposition of diamond films. Microwaves provided by a magnetron (2.45GHz, 300W) are fed into a cylindrical cavity through a loop antenna. The cavity can be adjusted to excite the TM011 to TM013 modes. Using a large cavity (TM0.13 mode) to reduce the power density, the microwave coupling into the cavity is expected to be more efficient. However, in order to use microwave power effectively, only a small portion of the cavity separated by a glass enclosure to keep the vacuum pressure is used as the reaction chamber. Thus the plasma is produced only in the reaction chamber, and the effect of the plasma loading on the microwave coupling is also minimized. The experimental results indeed show that a very stable plasma can be produced, over a large range of incident power levels.

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M3 - Conference article

AN - SCOPUS:0029724623

SN - 0730-9244

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JO - IEEE International Conference on Plasma Science

JF - IEEE International Conference on Plasma Science

T2 - Proceedings of the 1996 IEEE International Conference on Plasma Science

Y2 - 3 June 1996 through 5 June 1996

ER -

Microwave plasma system for the deposition of diamond films

Abstract

ASJC Scopus subject areas

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