Microwave plasma system for the deposition of diamond films

E. Koretzky, S. P. Kuo, S. C. Kuo

Research output: Contribution to journalConference articlepeer-review


A microwave plasma source is designed for the chemical vapor deposition of diamond films. Microwaves provided by a magnetron (2.45GHz, 300W) are fed into a cylindrical cavity through a loop antenna. The cavity can be adjusted to excite the TM011 to TM013 modes. Using a large cavity (TM0.13 mode) to reduce the power density, the microwave coupling into the cavity is expected to be more efficient. However, in order to use microwave power effectively, only a small portion of the cavity separated by a glass enclosure to keep the vacuum pressure is used as the reaction chamber. Thus the plasma is produced only in the reaction chamber, and the effect of the plasma loading on the microwave coupling is also minimized. The experimental results indeed show that a very stable plasma can be produced, over a large range of incident power levels.

Original languageEnglish (US)
Pages (from-to)217
Number of pages1
JournalIEEE International Conference on Plasma Science
StatePublished - 1996
EventProceedings of the 1996 IEEE International Conference on Plasma Science - Boston, MA, USA
Duration: Jun 3 1996Jun 5 1996

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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