Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet

Qiang Zhang, Peng Li, Xin He, Jun Li, Yan Wen, Wencai Ren, Hui Ming Cheng, Yang Yang, Yas F. Al-Hadeethi, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review

Abstract

A bulk sample of pressed graphene sheets was prepared under hydraulic pressure (∼150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140kOe ≤ H ≤ 140kOe) range. The magnetoresistance measured at a fixed temperature can be described by R(H, ⊖) = R(ϵ H, 0) with ϵ = ( cos2 ⊖ +υ-2sin2⊖) 1/2, where υ is the mobility anisotropy constant and ⊖ is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation (δμ). The magnetoresistance value at 140 kOe was related to the average mobility (〈μ〉) because of the condition δμ<〈μ〉. The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohlers rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.

Original languageEnglish (US)
Article number425005
JournalJournal of Physics D: Applied Physics
Volume49
Issue number42
DOIs
StatePublished - Sep 27 2016

Keywords

  • 3D anisotropy
  • graphene sheets
  • linear magnetoresistance
  • mobility fluctuation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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