Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications
Michael M. Oye, Davood Shahrjerdi, Injo Ok, Jeffrey B. Hurst, Shannon D. Lewis, Sagnik Dey, David Q. Kelly, Sachin Joshi, Terry J. Mattord, Xiaojun Yu, Mark A. Wistey, James S. Harris, Archie L. Holmes, Jack C. Lee, Sanjay K. Banerjee
Research output: Contribution to journal › Article › peer-review
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