Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications

Michael M. Oye, Davood Shahrjerdi, Injo Ok, Jeffrey B. Hurst, Shannon D. Lewis, Sagnik Dey, David Q. Kelly, Sachin Joshi, Terry J. Mattord, Xiaojun Yu, Mark A. Wistey, James S. Harris, Archie L. Holmes, Jack C. Lee, Sanjay K. Banerjee

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Material Science