MoS2 FET fabrication and modeling for large-scale flexible electronics

Lili Yu; Dina El-Damak; Sungjae Ha; Shaloo Rakheja; Xi Ling; Jing Kong; Dimitri Antoniadis; Anantha Chandrakasan; Tomas Palacios

doi:10.1109/VLSIT.2015.7223655

MoS₂ FET fabrication and modeling for large-scale flexible electronics

Lili Yu, Dina El-Damak, Sungjae Ha, Shaloo Rakheja, Xi Ling, Jing Kong, Dimitri Antoniadis, Anantha Chandrakasan, Tomas Palacios

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a state-of-the-art fabrication technology and physics-based model for molybdenum disulfide (MoS₂) field effect transistors (FETs) to realize large-scale circuits. Uniform and large area chemical vapor deposition (CVD) growth of monolayer MoS₂ was achieved by using perylene-3,4,9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding. Then, a gate first process results in enhancement mode FETs and also reduces performance variation and enables better process control. In addition, a Verilog-A compact model precisely predicts the performance of the fabricated MoS₂ FETs and eases the large-scale integrated design. By using this technology, a switched capacitor DC-DC converter is implemented, and the measurement of the converter shows good agreement with the simulations.

Original language	English (US)
Title of host publication	2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	T144-T145
ISBN (Electronic)	9784863485013
DOIs	https://doi.org/10.1109/VLSIT.2015.7223655
State	Published - Aug 25 2015
Event	Symposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan Duration: Jun 16 2015 → Jun 18 2015

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2015-August
ISSN (Print)	0743-1562

Other

Other	Symposium on VLSI Technology, VLSI Technology 2015
Country/Territory	Japan
City	Kyoto
Period	6/16/15 → 6/18/15

Keywords

2D materials
MoS
flexible IC
large scale

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2015.7223655

Cite this

Yu, L., El-Damak, D., Ha, S., Rakheja, S., Ling, X., Kong, J., Antoniadis, D., Chandrakasan, A., & Palacios, T. (2015). MoS₂ FET fabrication and modeling for large-scale flexible electronics. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (pp. T144-T145). Article 7223655 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223655

MoS₂ FET fabrication and modeling for large-scale flexible electronics. / Yu, Lili; El-Damak, Dina; Ha, Sungjae et al.
2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2015. p. T144-T145 7223655 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, L, El-Damak, D, Ha, S, Rakheja, S, Ling, X, Kong, J, Antoniadis, D, Chandrakasan, A & Palacios, T 2015, MoS₂ FET fabrication and modeling for large-scale flexible electronics. in 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers., 7223655, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. T144-T145, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 6/16/15. https://doi.org/10.1109/VLSIT.2015.7223655

Yu L, El-Damak D, Ha S, Rakheja S, Ling X, Kong J et al. MoS₂ FET fabrication and modeling for large-scale flexible electronics. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2015. p. T144-T145. 7223655. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2015.7223655

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