MoS2 FET fabrication and modeling for large-scale flexible electronics

Lili Yu, Dina El-Damak, Sungjae Ha, Shaloo Rakheja, Xi Ling, Jing Kong, Dimitri Antoniadis, Anantha Chandrakasan, Tomas Palacios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a state-of-the-art fabrication technology and physics-based model for molybdenum disulfide (MoS2) field effect transistors (FETs) to realize large-scale circuits. Uniform and large area chemical vapor deposition (CVD) growth of monolayer MoS2 was achieved by using perylene-3,4,9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding. Then, a gate first process results in enhancement mode FETs and also reduces performance variation and enables better process control. In addition, a Verilog-A compact model precisely predicts the performance of the fabricated MoS2 FETs and eases the large-scale integrated design. By using this technology, a switched capacitor DC-DC converter is implemented, and the measurement of the converter shows good agreement with the simulations.

Original languageEnglish (US)
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT144-T145
ISBN (Electronic)9784863485013
DOIs
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2015-August
ISSN (Print)0743-1562

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period6/16/156/18/15

Keywords

  • 2D materials
  • MoS
  • flexible IC
  • large scale

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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