Mueller matrix modeling of thick anisotropic crystals with metallic coatings

Alexander T. Martin; Shane M. Nichols; Melissa Tan; Bart Kahr

doi:10.1016/j.apsusc.2016.10.124

Mueller matrix modeling of thick anisotropic crystals with metallic coatings

Alexander T. Martin, Shane M. Nichols, Melissa Tan, Bart Kahr

Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

The optical behavior of thin multilayer systems can be analyzed by generalized ellipsometry and modeled using transfer matrices. Recently, a method has been implemented for modeling the interference of multiply-reflected partial waves in the spectroscopic study of bianisotropic crystals of moderate thickness using light sources of finite coherence. Here, a partial wave model is compared to reflection Mueller matrix measurements in order to simultaneously and accurately determine the thickness of distinct hetero-metallic thin films that flank a bianisotropic crystal whose thickness corresponds to the partial wave regime.

Original language	English (US)
Pages (from-to)	578-584
Number of pages	7
Journal	Applied Surface Science
Volume	421
DOIs	https://doi.org/10.1016/j.apsusc.2016.10.124
State	Published - Nov 1 2017

Keywords

Coherence
Ellipsometry
Mueller matrix
Multiple reflections
Thin films

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2016.10.124

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@article{b968234006524fa085bee35fd0096ed2,

title = "Mueller matrix modeling of thick anisotropic crystals with metallic coatings",

abstract = "The optical behavior of thin multilayer systems can be analyzed by generalized ellipsometry and modeled using transfer matrices. Recently, a method has been implemented for modeling the interference of multiply-reflected partial waves in the spectroscopic study of bianisotropic crystals of moderate thickness using light sources of finite coherence. Here, a partial wave model is compared to reflection Mueller matrix measurements in order to simultaneously and accurately determine the thickness of distinct hetero-metallic thin films that flank a bianisotropic crystal whose thickness corresponds to the partial wave regime.",

keywords = "Coherence, Ellipsometry, Mueller matrix, Multiple reflections, Thin films",

author = "Martin, {Alexander T.} and Nichols, {Shane M.} and Melissa Tan and Bart Kahr",

note = "Funding Information: This work was supported by the National Institutes of Health [ 5R21GM107774-02 ], the National Science Foundation [ DMR-1105000 ], and an NSF Predoctoral Fellowship to SMN [ DGE-12342536 ]. Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = nov,

day = "1",

doi = "10.1016/j.apsusc.2016.10.124",

language = "English (US)",

volume = "421",

pages = "578--584",

journal = "Applied Surface Science",

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TY - JOUR

T1 - Mueller matrix modeling of thick anisotropic crystals with metallic coatings

AU - Martin, Alexander T.

AU - Nichols, Shane M.

AU - Tan, Melissa

AU - Kahr, Bart

N1 - Funding Information: This work was supported by the National Institutes of Health [ 5R21GM107774-02 ], the National Science Foundation [ DMR-1105000 ], and an NSF Predoctoral Fellowship to SMN [ DGE-12342536 ]. Publisher Copyright: © 2016 Elsevier B.V.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - The optical behavior of thin multilayer systems can be analyzed by generalized ellipsometry and modeled using transfer matrices. Recently, a method has been implemented for modeling the interference of multiply-reflected partial waves in the spectroscopic study of bianisotropic crystals of moderate thickness using light sources of finite coherence. Here, a partial wave model is compared to reflection Mueller matrix measurements in order to simultaneously and accurately determine the thickness of distinct hetero-metallic thin films that flank a bianisotropic crystal whose thickness corresponds to the partial wave regime.

AB - The optical behavior of thin multilayer systems can be analyzed by generalized ellipsometry and modeled using transfer matrices. Recently, a method has been implemented for modeling the interference of multiply-reflected partial waves in the spectroscopic study of bianisotropic crystals of moderate thickness using light sources of finite coherence. Here, a partial wave model is compared to reflection Mueller matrix measurements in order to simultaneously and accurately determine the thickness of distinct hetero-metallic thin films that flank a bianisotropic crystal whose thickness corresponds to the partial wave regime.

KW - Coherence

KW - Ellipsometry

KW - Mueller matrix

KW - Multiple reflections

KW - Thin films

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DO - 10.1016/j.apsusc.2016.10.124

M3 - Article

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SN - 0169-4332

VL - 421

SP - 578

EP - 584

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Mueller matrix modeling of thick anisotropic crystals with metallic coatings

Abstract

Keywords

ASJC Scopus subject areas

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