TY - JOUR
T1 - n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication
AU - Mølnås, Håvard
AU - Russ, Boris
AU - Farrell, Steven L.
AU - Gordon, Madeleine P.
AU - Urban, Jeffrey J.
AU - Sahu, Ayaskanta
N1 - Funding Information:
The authors would like to acknowledge the Imaging Facility and Surface Science Facility of CUNY Advanced Science Research Center for instrument use, scientific and technical assistance. The authors acknowledge the use of shared facilities provided through the Materials Research Science and Engineering Center (MRSEC) program of the National Science Foundation under Award Numbers DMR-1420073 and DMR-0923251. Part of this work was performed at the Molecular Foundry, Lawrence Berkeley National Laboratory, and was supported by the Department of Energy, Office of Science, Office of Basic Energy Sciences, Scientific User Facilities Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. M.P.G. gratefully acknowledges support from the National Science Foundation Graduate Research Fellowship.
Funding Information:
The authors would like to acknowledge the Imaging Facility and Surface Science Facility of CUNY Advanced Science Research Center for instrument use, scientific and technical assistance. The authors acknowledge the use of shared facilities provided through the Materials Research Science and Engineering Center (MRSEC) program of the National Science Foundation under Award Numbers DMR-1420073 and DMR-0923251. Part of this work was performed at the Molecular Foundry, Lawrence Berkeley National Laboratory, and was supported by the Department of Energy, Office of Science, Office of Basic Energy Sciences, Scientific User Facilities Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. M.P.G. gratefully acknowledges support from the National Science Foundation Graduate Research Fellowship.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/7/15
Y1 - 2022/7/15
N2 - The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. In this report, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi2Te3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.
AB - The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. In this report, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi2Te3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.
KW - BiTe nanowires
KW - Isoelectronic surface doping
KW - Solution processable
KW - p-n homojunction
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U2 - 10.1016/j.apsusc.2022.153089
DO - 10.1016/j.apsusc.2022.153089
M3 - Article
AN - SCOPUS:85126844850
VL - 590
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
M1 - 153089
ER -