Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films

G. Dushaq; A. Nayfelr; M. Rasras

doi:10.1109/NANO.2018.8626343

Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films

G. Dushaq, A. Nayfelr, M. Rasras

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.

Original language	English (US)
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	IEEE Computer Society Press
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626343
State	Published - Jul 2 2018
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: Jul 23 2018 → Jul 26 2018

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	7/23/18 → 7/26/18

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2018.8626343

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Dushaq, G, Nayfelr, A & Rasras, M 2018, Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films. in 18th International Conference on Nanotechnology, NANO 2018., 8626343, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society Press, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 7/23/18. https://doi.org/10.1109/NANO.2018.8626343

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title = "Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films",

abstract = "In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.",

author = "G. Dushaq and A. Nayfelr and M. Rasras",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

year = "2018",

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doi = "10.1109/NANO.2018.8626343",

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T1 - Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films

AU - Dushaq, G.

AU - Nayfelr, A.

AU - Rasras, M.

PY - 2018/7/2

Y1 - 2018/7/2

N2 - In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.

AB - In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.

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DO - 10.1109/NANO.2018.8626343

M3 - Conference contribution

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T3 - Proceedings of the IEEE Conference on Nanotechnology

BT - 18th International Conference on Nanotechnology, NANO 2018

PB - IEEE Computer Society Press

T2 - 18th International Conference on Nanotechnology, NANO 2018

Y2 - 23 July 2018 through 26 July 2018

ER -

Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films

Abstract

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