Nano-Mechanical Probing of Threding Dislocation in Ge-on-Si Films

G. Dushaq, A. Nayfelr, M. Rasras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we present a direct growth mechanism of thin Ge-on-Si films at low temperature using RF-PECVD. Nonoindentation is used as depth sensing technique to reveal the film residual stress and threading dislocation density (TDD). The findings enabled us to grow a 700 nm Ge film directly on Si with TDD of ∼ 1. x10 6cm-2. In addition, the correlation between the nanomechanical response and the structural properties of the integrated Ge films is investigated. Results show no variation in the mechanical response of the films for 150nm and 165nm penetration depths. Moreover, the hardness data obtained at different depth exabits lower values compared to bulk Ge due to the residual stress in the film. This technique is promising for testing the mechanical reliability of Ge based nano-devices.

Original languageEnglish (US)
Title of host publication18th International Conference on Nanotechnology, NANO 2018
PublisherIEEE Computer Society Press
ISBN (Electronic)9781538653364
DOIs
StatePublished - Jan 24 2019
Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
Duration: Jul 23 2018Jul 26 2018

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2018-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference18th International Conference on Nanotechnology, NANO 2018
CountryIreland
CityCork
Period7/23/187/26/18

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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