Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography

Xiangyu Liu, Zhujun Huang, Xiaorui Zheng, Davood Shahrjerdi, Elisa Riedo

Research output: Contribution to journalArticlepeer-review

Abstract

The development of a scalable and cost-effective nanofabrication method is of key importance for future advances in nanoelectronics. Thermal scanning probe lithography (t-SPL) is a growing nanopatterning method with potential for parallelization, offering unique capabilities that make it an attractive candidate for industrial nanomanufacturing. Here, we demonstrate the possibility to apply t-SPL for the fabrication of graphene devices. In particular, we use t-SPL to produce high performing graphene-based field effect transistors (FETs). The here described t-SPL process includes the fabrication of high-quality metal contacts, as well as patterning and etching of graphene to define the active region of the device. The electrical measurements on the t-SPL fabricated FETs indicate a symmetric conductance at the Dirac point and a low specific contact resistance without the use of any contact engineering strategy. The entire t-SPL nanofabrication process is performed without the need for masks, and in ambient conditions. Furthermore, thanks to the t-SPL in situ simultaneous patterning and imaging capability, no markers are required. These features substantially decrease fabrication time and cost.

Original languageEnglish (US)
Article number011107
JournalAPL Materials
Volume9
Issue number1
DOIs
StatePublished - Jan 1 2021

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Fingerprint Dive into the research topics of 'Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography'. Together they form a unique fingerprint.

Cite this