Negative differential resistance and magnetotransport in Fe3O4/SiO2/Si heterostructures

Xiang Liu; Wenbo Mi; Qiang Zhang; Xixiang Zhang

doi:10.1063/1.5092872

Negative differential resistance and magnetotransport in Fe₃O₄/SiO₂/Si heterostructures

Xiang Liu, Wenbo Mi, Qiang Zhang, Xixiang Zhang

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Abstract

The electronic transport and magnetotransport properties of Fe₃O₄/SiO₂/Si heterostructures were investigated with a current source. Negative differential resistance is observed in Fe₃O₄/SiO₂/p-Si heterostructures. The measurement circuit with four electrodes that I+ (I-) and V+ (V-) came into contact with the Fe₃O₄ (Si) layer introduces an in-plane transport into the heterostructures. By decreasing the temperature, the in-plane conductive channel switches from Fe₃O₄ to p-Si. However, the in-plane current is still carried by Fe₃O₄ in Fe₃O₄/SiO₂/n-Si heterostructures. The formation of an accumulation layer in p-Si facilitates conductive channel switching (CCS), while the depletion layer in n-Si hampers the CCS. At 150 K, a magnetic-field-independent magnetoresistance (MR) in Fe₃O₄/SiO₂/p-Si heterostructures manifests the conductive channel in the space charge region of p-Si. A positive MR generated from the increased electronic scattering in a trapezoidal space charge region reshaped by the magnetic field has been detected.

Original language	English (US)
Article number	242402
Journal	Applied Physics Letters
Volume	114
Issue number	24
DOIs	https://doi.org/10.1063/1.5092872
State	Published - Jun 17 2019

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Negative differential resistance and magnetotransport in Fe3O4/SiO2/Si heterostructures",

abstract = "The electronic transport and magnetotransport properties of Fe3O4/SiO2/Si heterostructures were investigated with a current source. Negative differential resistance is observed in Fe3O4/SiO2/p-Si heterostructures. The measurement circuit with four electrodes that I+ (I-) and V+ (V-) came into contact with the Fe3O4 (Si) layer introduces an in-plane transport into the heterostructures. By decreasing the temperature, the in-plane conductive channel switches from Fe3O4 to p-Si. However, the in-plane current is still carried by Fe3O4 in Fe3O4/SiO2/n-Si heterostructures. The formation of an accumulation layer in p-Si facilitates conductive channel switching (CCS), while the depletion layer in n-Si hampers the CCS. At 150 K, a magnetic-field-independent magnetoresistance (MR) in Fe3O4/SiO2/p-Si heterostructures manifests the conductive channel in the space charge region of p-Si. A positive MR generated from the increased electronic scattering in a trapezoidal space charge region reshaped by the magnetic field has been detected.",

author = "Xiang Liu and Wenbo Mi and Qiang Zhang and Xixiang Zhang",

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AU - Liu, Xiang

AU - Mi, Wenbo

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AU - Zhang, Xixiang

PY - 2019/6/17

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N2 - The electronic transport and magnetotransport properties of Fe3O4/SiO2/Si heterostructures were investigated with a current source. Negative differential resistance is observed in Fe3O4/SiO2/p-Si heterostructures. The measurement circuit with four electrodes that I+ (I-) and V+ (V-) came into contact with the Fe3O4 (Si) layer introduces an in-plane transport into the heterostructures. By decreasing the temperature, the in-plane conductive channel switches from Fe3O4 to p-Si. However, the in-plane current is still carried by Fe3O4 in Fe3O4/SiO2/n-Si heterostructures. The formation of an accumulation layer in p-Si facilitates conductive channel switching (CCS), while the depletion layer in n-Si hampers the CCS. At 150 K, a magnetic-field-independent magnetoresistance (MR) in Fe3O4/SiO2/p-Si heterostructures manifests the conductive channel in the space charge region of p-Si. A positive MR generated from the increased electronic scattering in a trapezoidal space charge region reshaped by the magnetic field has been detected.

AB - The electronic transport and magnetotransport properties of Fe3O4/SiO2/Si heterostructures were investigated with a current source. Negative differential resistance is observed in Fe3O4/SiO2/p-Si heterostructures. The measurement circuit with four electrodes that I+ (I-) and V+ (V-) came into contact with the Fe3O4 (Si) layer introduces an in-plane transport into the heterostructures. By decreasing the temperature, the in-plane conductive channel switches from Fe3O4 to p-Si. However, the in-plane current is still carried by Fe3O4 in Fe3O4/SiO2/n-Si heterostructures. The formation of an accumulation layer in p-Si facilitates conductive channel switching (CCS), while the depletion layer in n-Si hampers the CCS. At 150 K, a magnetic-field-independent magnetoresistance (MR) in Fe3O4/SiO2/p-Si heterostructures manifests the conductive channel in the space charge region of p-Si. A positive MR generated from the increased electronic scattering in a trapezoidal space charge region reshaped by the magnetic field has been detected.

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Negative differential resistance and magnetotransport in Fe₃O₄/SiO₂/Si heterostructures

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