Negative domain wall contribution to the resistivity of microfabricated fe wires

U. Ruediger; J. Yu; S. Zhang; A. D. Kent

doi:10.1103/PhysRevLett.80.5639

Negative domain wall contribution to the resistivity of microfabricated fe wires

U. Ruediger, J. Yu, S. Zhang, A. D. Kent

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 μm linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature, and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.

Original language	English (US)
Pages (from-to)	5639-5642
Number of pages	4
Journal	Physical Review Letters
Volume	80
Issue number	25
DOIs	https://doi.org/10.1103/PhysRevLett.80.5639
State	Published - 1998

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.80.5639

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title = "Negative domain wall contribution to the resistivity of microfabricated fe wires",

abstract = "The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 μm linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature, and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.",

author = "U. Ruediger and J. Yu and S. Zhang and Kent, {A. D.}",

year = "1998",

doi = "10.1103/PhysRevLett.80.5639",

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AU - Ruediger, U.

AU - Yu, J.

AU - Zhang, S.

AU - Kent, A. D.

PY - 1998

Y1 - 1998

N2 - The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 μm linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature, and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.

AB - The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 μm linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature, and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.

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Negative domain wall contribution to the resistivity of microfabricated fe wires

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