Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Christian Russ, Karlheinz Bock, Mahmoud Rasras, Ingrid De Wolf, Guido Groeseneken, Herman E. Maes

Research output: Contribution to journalConference articlepeer-review

Abstract

The triggering of grounded-gate nMOS transistors and field-oxide devices, essential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behavior allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.

Original languageEnglish (US)
Pages (from-to)1551-1561
Number of pages11
JournalMicroelectronics Reliability
Volume39
Issue number11
DOIs
StatePublished - Nov 1999
EventProceedings of the 1998 20th Annual International Electircal Overstress/Electrostatic Discharge (EOS/ESD) - Reno, NV, USA
Duration: Oct 6 1998Oct 8 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing'. Together they form a unique fingerprint.

Cite this