Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Christian Russ; Karlheinz Bock; Mahmoud Rasras; Ingrid De Wolf; Guido Groeseneken; Herman E. Maes

doi:10.1016/S0026-2714(99)00072-4

Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Christian Russ, Karlheinz Bock, Mahmoud Rasras, Ingrid De Wolf, Guido Groeseneken, Herman E. Maes

Research output: Contribution to journal › Conference article › peer-review

Abstract

The triggering of grounded-gate nMOS transistors and field-oxide devices, essential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behavior allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.

Original language	English (US)
Pages (from-to)	1551-1561
Number of pages	11
Journal	Microelectronics Reliability
Volume	39
Issue number	11
DOIs	https://doi.org/10.1016/S0026-2714(99)00072-4
State	Published - Nov 1999
Event	Proceedings of the 1998 20th Annual International Electircal Overstress/Electrostatic Discharge (EOS/ESD) - Reno, NV, USA Duration: Oct 6 1998 → Oct 8 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2714(99)00072-4

Cite this

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title = "Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing",

abstract = "The triggering of grounded-gate nMOS transistors and field-oxide devices, essential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behavior allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.",

author = "Christian Russ and Karlheinz Bock and Mahmoud Rasras and {De Wolf}, Ingrid and Guido Groeseneken and Maes, {Herman E.}",

note = "Funding Information: The authors thank Bart Keppens (IMEC) for his support in coupling the TLP and with the EMMI, and Jim Colvin (WSI) as mentor of this paper. The work is being funded by the Commission of the European Community in the ESPRIT project {\textquoteleft}ESDEM{\textquoteright} and by Alcatel Bell in the frame of a project with the Flemish Institute for Technological Research in Industry (IWT).; Proceedings of the 1998 20th Annual International Electircal Overstress/Electrostatic Discharge (EOS/ESD) ; Conference date: 06-10-1998 Through 08-10-1998",

year = "1999",

month = nov,

doi = "10.1016/S0026-2714(99)00072-4",

language = "English (US)",

volume = "39",

pages = "1551--1561",

journal = "Microelectronics Reliability",

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publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

AU - Russ, Christian

AU - Bock, Karlheinz

AU - Rasras, Mahmoud

AU - De Wolf, Ingrid

AU - Groeseneken, Guido

AU - Maes, Herman E.

N1 - Funding Information: The authors thank Bart Keppens (IMEC) for his support in coupling the TLP and with the EMMI, and Jim Colvin (WSI) as mentor of this paper. The work is being funded by the Commission of the European Community in the ESPRIT project ‘ESDEM’ and by Alcatel Bell in the frame of a project with the Flemish Institute for Technological Research in Industry (IWT).

PY - 1999/11

Y1 - 1999/11

N2 - The triggering of grounded-gate nMOS transistors and field-oxide devices, essential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behavior allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.

AB - The triggering of grounded-gate nMOS transistors and field-oxide devices, essential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behavior allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.

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U2 - 10.1016/S0026-2714(99)00072-4

DO - 10.1016/S0026-2714(99)00072-4

M3 - Conference article

AN - SCOPUS:0033221607

SN - 0026-2714

VL - 39

SP - 1551

EP - 1561

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 11

T2 - Proceedings of the 1998 20th Annual International Electircal Overstress/Electrostatic Discharge (EOS/ESD)

Y2 - 6 October 1998 through 8 October 1998

ER -

Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Abstract

ASJC Scopus subject areas

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